Abstract
GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy. It was found that GaN on alumina selectively regrown from pinholes in alumina by annealing prior to GaN regrowth. Hardly any of the dislocations in the GaN template propagated through the interlayer. Most of dislocations were terminated or bent at the interface between the alumina and regrown GaN. On the other hand, new vertical dark lines and horizontal dislocations were generated in regrown layer. The vertical lines were found to correspond to an inversion domain from convergent beam electron diffraction analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 1930-1933 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 B |
| Publication status | Published - 2004 Apr |
| Externally published | Yes |
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Keywords
- Alumina
- Dislocation
- Dislocation density
- GaN
- MOVPE
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN. / Hiroki, Masanobu; Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki; Kobayashi, Takashi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 04.2004, p. 1930-1933.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of GaN/Alumina/GaN structure to reduce dislocations in GaN
AU - Hiroki, Masanobu
AU - Kumakura, Kazuhide
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
AU - Kobayashi, Takashi
PY - 2004/4
Y1 - 2004/4
N2 - GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy. It was found that GaN on alumina selectively regrown from pinholes in alumina by annealing prior to GaN regrowth. Hardly any of the dislocations in the GaN template propagated through the interlayer. Most of dislocations were terminated or bent at the interface between the alumina and regrown GaN. On the other hand, new vertical dark lines and horizontal dislocations were generated in regrown layer. The vertical lines were found to correspond to an inversion domain from convergent beam electron diffraction analysis.
AB - GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy. It was found that GaN on alumina selectively regrown from pinholes in alumina by annealing prior to GaN regrowth. Hardly any of the dislocations in the GaN template propagated through the interlayer. Most of dislocations were terminated or bent at the interface between the alumina and regrown GaN. On the other hand, new vertical dark lines and horizontal dislocations were generated in regrown layer. The vertical lines were found to correspond to an inversion domain from convergent beam electron diffraction analysis.
KW - Alumina
KW - Dislocation
KW - Dislocation density
KW - GaN
KW - MOVPE
UR - http://www.scopus.com/inward/record.url?scp=3142568963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142568963&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:3142568963
VL - 43
SP - 1930
EP - 1933
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -