Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Tomohiro Nango, Takeshi Miyagawa, Takahiro Katagiri, Yoshimichi Ohki, Kwang Soo Seol, Makoto Takiyama

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
CountryJapan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • Cite this

    Kato, H., Nango, T., Miyagawa, T., Katagiri, T., Ohki, Y., Seol, K. S., & Takiyama, M. (2001). Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. 483-486. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.