Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Tomohiro Nango, Takeshi Miyagawa, Takahiro Katagiri, Yoshimichi Ohki, Kwang Soo Seol, Makoto Takiyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Pages483-486
    Number of pages4
    Publication statusPublished - 2001
    EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji
    Duration: 2001 Nov 192001 Nov 22

    Other

    OtherProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
    CityHimeji
    Period01/11/1901/11/22

    Fingerprint

    Hafnium
    Silicates
    Plasma enhanced chemical vapor deposition
    Fabrication
    Permittivity

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Kato, H., Nango, T., Miyagawa, T., Katagiri, T., Ohki, Y., Seol, K. S., & Takiyama, M. (2001). Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 483-486)

    Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. / Kato, Hiromitsu; Nango, Tomohiro; Miyagawa, Takeshi; Katagiri, Takahiro; Ohki, Yoshimichi; Seol, Kwang Soo; Takiyama, Makoto.

    Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 483-486.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kato, H, Nango, T, Miyagawa, T, Katagiri, T, Ohki, Y, Seol, KS & Takiyama, M 2001, Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. in Proceedings of the International Symposium on Electrical Insulating Materials. pp. 483-486, Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, 01/11/19.
    Kato H, Nango T, Miyagawa T, Katagiri T, Ohki Y, Seol KS et al. Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. In Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 483-486
    Kato, Hiromitsu ; Nango, Tomohiro ; Miyagawa, Takeshi ; Katagiri, Takahiro ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Takiyama, Makoto. / Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition. Proceedings of the International Symposium on Electrical Insulating Materials. 2001. pp. 483-486
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    AU - Miyagawa, Takeshi

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    AU - Ohki, Yoshimichi

    AU - Seol, Kwang Soo

    AU - Takiyama, Makoto

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