Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

H. Katsumata, Y. Makita, T. Takada, H. Tanoue, Naoto Kobayashi, M. Hasegawa, H. Kakemoto, T. Tsukamoto, S. Uekusa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report on the structural and electrical properties of iron silicides in the transformation process from ε-FeSi to β-FeSi2 and show the electrical characteristics of heterostructure p-β-Fe0.95 Mn0.05Si2/n-Si diodes formed by high-dose Fe+ and Mn+ co-implantation in Si (100). A mixture of polycrystalline ε-FeSi and β-FeSi2 with a thickness of 75 nm and the resistivity of ρ = 4.9×10-4 Ω·cm was in-situ formed during Fe+-implantation in Si (100) at 350 °C. These samples were annealed at Ta = 400-1100 °C and characterized by Rutherford backscattering spectrometry, van der Pauw and X-ray diffraction. Single β-FeSi2 layers with ρ = 0.31 Ω·cm were formed after annealing at Ta = 600 °C. Although the samples with Ta<600 °C exhibited p-type conductivity (hole concentrations of p = 5.3-11×1020 cm-3 and hole mobilities of μh = 8.7-32 cm2/V/s), the samples with Ta≥600 °C presented n-type conductivity (n = 4.2-14×1016 cm-3 and μe = 220-520 cm2/V/s). The origin of p-type conductivity may be due to contribution of Fe-rich β-FeSi2, while that of the electron carrier could be related to the formation of stoichiometric β-FeSi2, in which the predominant impurity phosphorous atoms remaining in the n-Si substrates could be electrically activated as donors in β-FeSi2 by high-temperature annealing. The I-V and C-V characteristics of the p-β-Fe0.95Mn0.05Si2/n-Si(100) diodes indicated that the impurity distribution of the pn junction is linearly graded, which leads to a high ideality factor of η = 4.4.

Original languageEnglish
Pages (from-to)244-250
Number of pages7
JournalThin Solid Films
Volume381
Issue number2
DOIs
Publication statusPublished - 2001 Jan 15
Externally publishedYes

Fingerprint

Ion implantation
Heterojunctions
implantation
Diodes
diodes
Annealing
Impurities
Fabrication
Hole concentration
conductivity
Silicides
fabrication
Hole mobility
Rutherford backscattering spectroscopy
Substrates
Spectrometry
Structural properties
impurities
Electric properties
annealing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates. / Katsumata, H.; Makita, Y.; Takada, T.; Tanoue, H.; Kobayashi, Naoto; Hasegawa, M.; Kakemoto, H.; Tsukamoto, T.; Uekusa, S.

In: Thin Solid Films, Vol. 381, No. 2, 15.01.2001, p. 244-250.

Research output: Contribution to journalArticle

Katsumata, H, Makita, Y, Takada, T, Tanoue, H, Kobayashi, N, Hasegawa, M, Kakemoto, H, Tsukamoto, T & Uekusa, S 2001, 'Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates', Thin Solid Films, vol. 381, no. 2, pp. 244-250. https://doi.org/10.1016/S0040-6090(00)01751-X
Katsumata, H. ; Makita, Y. ; Takada, T. ; Tanoue, H. ; Kobayashi, Naoto ; Hasegawa, M. ; Kakemoto, H. ; Tsukamoto, T. ; Uekusa, S. / Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates. In: Thin Solid Films. 2001 ; Vol. 381, No. 2. pp. 244-250.
@article{7879f12196aa43519aaa68496426ea0f,
title = "Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates",
abstract = "We report on the structural and electrical properties of iron silicides in the transformation process from ε-FeSi to β-FeSi2 and show the electrical characteristics of heterostructure p-β-Fe0.95 Mn0.05Si2/n-Si diodes formed by high-dose Fe+ and Mn+ co-implantation in Si (100). A mixture of polycrystalline ε-FeSi and β-FeSi2 with a thickness of 75 nm and the resistivity of ρ = 4.9×10-4 Ω·cm was in-situ formed during Fe+-implantation in Si (100) at 350 °C. These samples were annealed at Ta = 400-1100 °C and characterized by Rutherford backscattering spectrometry, van der Pauw and X-ray diffraction. Single β-FeSi2 layers with ρ = 0.31 Ω·cm were formed after annealing at Ta = 600 °C. Although the samples with Ta<600 °C exhibited p-type conductivity (hole concentrations of p = 5.3-11×1020 cm-3 and hole mobilities of μh = 8.7-32 cm2/V/s), the samples with Ta≥600 °C presented n-type conductivity (n = 4.2-14×1016 cm-3 and μe = 220-520 cm2/V/s). The origin of p-type conductivity may be due to contribution of Fe-rich β-FeSi2, while that of the electron carrier could be related to the formation of stoichiometric β-FeSi2, in which the predominant impurity phosphorous atoms remaining in the n-Si substrates could be electrically activated as donors in β-FeSi2 by high-temperature annealing. The I-V and C-V characteristics of the p-β-Fe0.95Mn0.05Si2/n-Si(100) diodes indicated that the impurity distribution of the pn junction is linearly graded, which leads to a high ideality factor of η = 4.4.",
author = "H. Katsumata and Y. Makita and T. Takada and H. Tanoue and Naoto Kobayashi and M. Hasegawa and H. Kakemoto and T. Tsukamoto and S. Uekusa",
year = "2001",
month = "1",
day = "15",
doi = "10.1016/S0040-6090(00)01751-X",
language = "English",
volume = "381",
pages = "244--250",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Fabrication of heterostructure p-β-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates

AU - Katsumata, H.

AU - Makita, Y.

AU - Takada, T.

AU - Tanoue, H.

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Kakemoto, H.

AU - Tsukamoto, T.

AU - Uekusa, S.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - We report on the structural and electrical properties of iron silicides in the transformation process from ε-FeSi to β-FeSi2 and show the electrical characteristics of heterostructure p-β-Fe0.95 Mn0.05Si2/n-Si diodes formed by high-dose Fe+ and Mn+ co-implantation in Si (100). A mixture of polycrystalline ε-FeSi and β-FeSi2 with a thickness of 75 nm and the resistivity of ρ = 4.9×10-4 Ω·cm was in-situ formed during Fe+-implantation in Si (100) at 350 °C. These samples were annealed at Ta = 400-1100 °C and characterized by Rutherford backscattering spectrometry, van der Pauw and X-ray diffraction. Single β-FeSi2 layers with ρ = 0.31 Ω·cm were formed after annealing at Ta = 600 °C. Although the samples with Ta<600 °C exhibited p-type conductivity (hole concentrations of p = 5.3-11×1020 cm-3 and hole mobilities of μh = 8.7-32 cm2/V/s), the samples with Ta≥600 °C presented n-type conductivity (n = 4.2-14×1016 cm-3 and μe = 220-520 cm2/V/s). The origin of p-type conductivity may be due to contribution of Fe-rich β-FeSi2, while that of the electron carrier could be related to the formation of stoichiometric β-FeSi2, in which the predominant impurity phosphorous atoms remaining in the n-Si substrates could be electrically activated as donors in β-FeSi2 by high-temperature annealing. The I-V and C-V characteristics of the p-β-Fe0.95Mn0.05Si2/n-Si(100) diodes indicated that the impurity distribution of the pn junction is linearly graded, which leads to a high ideality factor of η = 4.4.

AB - We report on the structural and electrical properties of iron silicides in the transformation process from ε-FeSi to β-FeSi2 and show the electrical characteristics of heterostructure p-β-Fe0.95 Mn0.05Si2/n-Si diodes formed by high-dose Fe+ and Mn+ co-implantation in Si (100). A mixture of polycrystalline ε-FeSi and β-FeSi2 with a thickness of 75 nm and the resistivity of ρ = 4.9×10-4 Ω·cm was in-situ formed during Fe+-implantation in Si (100) at 350 °C. These samples were annealed at Ta = 400-1100 °C and characterized by Rutherford backscattering spectrometry, van der Pauw and X-ray diffraction. Single β-FeSi2 layers with ρ = 0.31 Ω·cm were formed after annealing at Ta = 600 °C. Although the samples with Ta<600 °C exhibited p-type conductivity (hole concentrations of p = 5.3-11×1020 cm-3 and hole mobilities of μh = 8.7-32 cm2/V/s), the samples with Ta≥600 °C presented n-type conductivity (n = 4.2-14×1016 cm-3 and μe = 220-520 cm2/V/s). The origin of p-type conductivity may be due to contribution of Fe-rich β-FeSi2, while that of the electron carrier could be related to the formation of stoichiometric β-FeSi2, in which the predominant impurity phosphorous atoms remaining in the n-Si substrates could be electrically activated as donors in β-FeSi2 by high-temperature annealing. The I-V and C-V characteristics of the p-β-Fe0.95Mn0.05Si2/n-Si(100) diodes indicated that the impurity distribution of the pn junction is linearly graded, which leads to a high ideality factor of η = 4.4.

UR - http://www.scopus.com/inward/record.url?scp=0035155566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035155566&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01751-X

DO - 10.1016/S0040-6090(00)01751-X

M3 - Article

AN - SCOPUS:0035155566

VL - 381

SP - 244

EP - 250

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -