Fabrication of high-intensity light-emitting diodes using nanostructures by ultraviolet nanoimprint lithography and electrodeposition

Hiroshi Ono, Yoshinobu Ono, Kenji Kasahara, Jun Mizuno, Shuichi Shoji

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UVNIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.

Original languageEnglish
Pages (from-to)933-935
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number2 PART 1
DOIs
Publication statusPublished - 2008 Feb 15

Fingerprint

High intensity light
Nanoimprint lithography
Electrodeposition
electrodeposition
Light emitting diodes
Nanostructures
light emitting diodes
lithography
Fabrication
fabrication
Masks
masks
etching
Reactive ion etching
Photonic crystals
radiant flux density
Etching
wafers
photonics
Substrates

Keywords

  • Electrodeposition
  • GaN
  • LED
  • Nanostructure
  • Photonic crystal
  • Ultraviolet nanoimprint lithography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of high-intensity light-emitting diodes using nanostructures by ultraviolet nanoimprint lithography and electrodeposition. / Ono, Hiroshi; Ono, Yoshinobu; Kasahara, Kenji; Mizuno, Jun; Shoji, Shuichi.

In: Japanese Journal of Applied Physics, Vol. 47, No. 2 PART 1, 15.02.2008, p. 933-935.

Research output: Contribution to journalArticle

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