Fabrication of high-intensity light-emitting diodes using nanostructures by ultraviolet nanoimprint lithography and electrodeposition

Hiroshi Ono, Yoshinobu Ono, Kenji Kasahara, Jun Mizuno, Shuichi Shoji

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24 Citations (Scopus)


Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UVNIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.

Original languageEnglish
Pages (from-to)933-935
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number2 PART 1
Publication statusPublished - 2008 Feb 15



  • Electrodeposition
  • GaN
  • LED
  • Nanostructure
  • Photonic crystal
  • Ultraviolet nanoimprint lithography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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