Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy

K. Ueda; Y. Hadate; K. Suzuki; H. Asano

doi:10.1016/j.tsf.2020.138361

Fabrication of high-quality epitaxial Bi_1-xSb_x films by two-step growth using molecular beam epitaxy

K. Ueda^*, Y. Hadate, K. Suzuki, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High-quality epitaxial Bi_1-xSb_x (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF₂ (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm²/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.

Original language	English
Article number	138361
Journal	Thin Solid Films
Volume	713
DOIs	https://doi.org/10.1016/j.tsf.2020.138361
Publication status	Published - 2020 Nov 1
Externally published	Yes

Keywords

Bismuth antimonide
Mobility
Molecular beam epitaxy
Thin films
Topological materials
Two-step growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2020.138361

Cite this

@article{ac6f68cab09a47f8896ee9ed3d7411ac,

title = "Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy",

abstract = "High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.",

keywords = "Bismuth antimonide, Mobility, Molecular beam epitaxy, Thin films, Topological materials, Two-step growth",

author = "K. Ueda and Y. Hadate and K. Suzuki and H. Asano",

note = "Funding Information: The authors thank Prof. Hotta for assistance in setting up the MBE chamber for BiSb film growth. This work was supported in part by the Iwatani Naoji Foundation . Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2020.138361",

language = "English",

volume = "713",

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AU - Ueda, K.

AU - Hadate, Y.

AU - Suzuki, K.

AU - Asano, H.

N1 - Funding Information: The authors thank Prof. Hotta for assistance in setting up the MBE chamber for BiSb film growth. This work was supported in part by the Iwatani Naoji Foundation . Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.

AB - High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.

KW - Bismuth antimonide

KW - Mobility

KW - Molecular beam epitaxy

KW - Thin films

KW - Topological materials

KW - Two-step growth

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