Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy

K. Ueda*, Y. Hadate, K. Suzuki, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.

Original languageEnglish
Article number138361
JournalThin Solid Films
Volume713
DOIs
Publication statusPublished - 2020 Nov 1
Externally publishedYes

Keywords

  • Bismuth antimonide
  • Mobility
  • Molecular beam epitaxy
  • Thin films
  • Topological materials
  • Two-step growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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