Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication statusPublished - 2009
Externally publishedYes
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2009 Jun 22009 Jun 4

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period09/6/209/6/4

Fingerprint

Quantum dot lasers
Semiconductor lasers
Fabrication
Semiconductor quantum dots
indium arsenide
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Fabrication of highly stacked quantum dot laser. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5225947]

Fabrication of highly stacked quantum dot laser. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5225947.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Fabrication of highly stacked quantum dot laser. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5225947, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 09/6/2.
Akahane K, Yamamoto N, Kawanishi T. Fabrication of highly stacked quantum dot laser. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5225947
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Fabrication of highly stacked quantum dot laser. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009.
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