Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original languageEnglish
Title of host publicationOptics InfoBase Conference Papers
Publication statusPublished - 2009
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 2009 May 312009 Jun 5

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period09/5/3109/6/5

Fingerprint

Quantum dot lasers
Semiconductor lasers
semiconductor lasers
quantum dots
Fabrication
fabrication
threshold currents
Semiconductor quantum dots
lasers
Compensation and Redress

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Fabrication of highly stacked quantum dot laser. In Optics InfoBase Conference Papers

Fabrication of highly stacked quantum dot laser. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Optics InfoBase Conference Papers. 2009.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Fabrication of highly stacked quantum dot laser. in Optics InfoBase Conference Papers. Conference on Lasers and Electro-Optics, CLEO 2009, Baltimore, MD, United States, 09/5/31.
Akahane K, Yamamoto N, Kawanishi T. Fabrication of highly stacked quantum dot laser. In Optics InfoBase Conference Papers. 2009
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Fabrication of highly stacked quantum dot laser. Optics InfoBase Conference Papers. 2009.
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