Fabrication of highly stacked quantum dot laser

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

Fabrication of highly stacked quantum dot laser

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
Publication status	Published - 2009 Dec 1
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: 2009 May 31 → 2009 Jun 5

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/5/31 → 09/6/5

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{536a4a29de03481c8b764d2bd998ab3d,

title = "Fabrication of highly stacked quantum dot laser",

abstract = "We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2009",

month = dec,

day = "1",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

TY - GEN

T1 - Fabrication of highly stacked quantum dot laser

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

AB - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

UR - http://www.scopus.com/inward/record.url?scp=84894067764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894067764&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894067764

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2009

T2 - Conference on Lasers and Electro-Optics, CLEO 2009

Y2 - 31 May 2009 through 5 June 2009

ER -

Fabrication of highly stacked quantum dot laser

Abstract

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ASJC Scopus subject areas

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