Fabrication of highly stacked quantum dot laser

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1364/cleo.2009.jthe19

Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original language	English
Title of host publication	International Quantum Electronics Conference, IQEC 2009
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.jthe19
Publication status	Published - 2009
Externally published	Yes
Event	International Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States Duration: 2009 May 31 → 2009 Jun 5

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	International Quantum Electronics Conference, IQEC 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/5/31 → 09/6/5

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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10.1364/cleo.2009.jthe19

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@inproceedings{6bf85c716455439eb47cf4fa8fcc4393,

title = "Fabrication of highly stacked quantum dot laser",

abstract = "We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2009",

doi = "10.1364/cleo.2009.jthe19",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "International Quantum Electronics Conference, IQEC 2009",

note = "International Quantum Electronics Conference, IQEC 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

TY - GEN

T1 - Fabrication of highly stacked quantum dot laser

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2009

Y1 - 2009

N2 - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

AB - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

UR - http://www.scopus.com/inward/record.url?scp=85085776670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85085776670&partnerID=8YFLogxK

U2 - 10.1364/cleo.2009.jthe19

DO - 10.1364/cleo.2009.jthe19

M3 - Conference contribution

AN - SCOPUS:85085776670

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - International Quantum Electronics Conference, IQEC 2009

PB - Optical Society of America (OSA)

T2 - International Quantum Electronics Conference, IQEC 2009

Y2 - 31 May 2009 through 5 June 2009

ER -

Fabrication of highly stacked quantum dot laser

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ASJC Scopus subject areas

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