Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference, IQEC 2009
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528698
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
Duration: 2009 May 31 → 2009 Jun 5

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherInternational Quantum Electronics Conference, IQEC 2009
CountryUnited States
CityBaltimore, MD
Period09/5/31 → 09/6/5

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Fabrication of highly stacked quantum dot laser. In International Quantum Electronics Conference, IQEC 2009 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2009.jthe19