TY - GEN
T1 - Fabrication of highly stacked quantum dot laser
AU - Akahane, Kouichi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
PY - 2009
Y1 - 2009
N2 - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
AB - We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
UR - http://www.scopus.com/inward/record.url?scp=85085776670&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85085776670&partnerID=8YFLogxK
U2 - 10.1364/cleo.2009.jthe19
DO - 10.1364/cleo.2009.jthe19
M3 - Conference contribution
AN - SCOPUS:85085776670
SN - 9781557528698
T3 - Optics InfoBase Conference Papers
BT - International Quantum Electronics Conference, IQEC 2009
PB - Optical Society of America (OSA)
T2 - International Quantum Electronics Conference, IQEC 2009
Y2 - 31 May 2009 through 5 June 2009
ER -