Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

Original languageEnglish
Article number22963
Pages (from-to)15-18
Number of pages4
JournalJournal of Crystal Growth
Volume432
DOIs
Publication statusPublished - 2015 Dec 15
Externally publishedYes

Keywords

  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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