Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

Original languageEnglish
Article number22963
Pages (from-to)15-18
Number of pages4
JournalJournal of Crystal Growth
Volume432
DOIs
Publication statusPublished - 2015 Dec 15
Externally publishedYes

Fingerprint

embedding
Semiconductor quantum dots
quantum dots
Fabrication
fabrication
Substrates
Semiconductor quantum wells
Monolayers
Photoluminescence
Microscopes
microscopes
quantum wells
degradation
Scanning
photoluminescence
Degradation
Wavelength
scanning
indium arsenide
cross sections

Keywords

  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

In: Journal of Crystal Growth, Vol. 432, 22963, 15.12.2015, p. 15-18.

Research output: Contribution to journalArticle

@article{b92643a272b84a8ea53e717dc9ddd771,
title = "Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method",
abstract = "Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.",
keywords = "A1. Nanostructures, A3. Molecular beam epitaxy, A3. Superlattices, B2. Semiconducting III-V materials",
author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",
year = "2015",
month = "12",
day = "15",
doi = "10.1016/j.jcrysgro.2015.08.016",
language = "English",
volume = "432",
pages = "15--18",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2015/12/15

Y1 - 2015/12/15

N2 - Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

AB - Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

KW - A1. Nanostructures

KW - A3. Molecular beam epitaxy

KW - A3. Superlattices

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=84943417503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943417503&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.08.016

DO - 10.1016/j.jcrysgro.2015.08.016

M3 - Article

AN - SCOPUS:84943417503

VL - 432

SP - 15

EP - 18

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 22963

ER -