Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device

Junya Oishi, Toshitaka Abe, Hiromasa Tabuchi, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    We fabricated coupled waveguides loaded with long-period grating for gain equalizing device using InGaAsP/InP, and we confirmed fundamental transmittance notch characteristics with a center wavelength of 1540nm and a bandwidth of about 50nm.

    Original languageEnglish
    Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
    Pages232-235
    Number of pages4
    DOIs
    Publication statusPublished - 2004
    Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima
    Duration: 2004 May 312004 Jun 4

    Other

    Other2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
    CityKagoshima
    Period04/5/3104/6/4

    Fingerprint

    notches
    transmittance
    Waveguides
    gratings
    waveguides
    bandwidth
    Bandwidth
    Fabrication
    Wavelength
    fabrication
    wavelengths

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Materials Science(all)

    Cite this

    Oishi, J., Abe, T., Tabuchi, H., & Utaka, K. (2004). Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 232-235). [TP-29] https://doi.org/10.1109/ICIPRM.2004.1442655

    Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. / Oishi, Junya; Abe, Toshitaka; Tabuchi, Hiromasa; Utaka, Katsuyuki.

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 232-235 TP-29.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Oishi, J, Abe, T, Tabuchi, H & Utaka, K 2004, Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., TP-29, pp. 232-235, 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM, Kagoshima, 04/5/31. https://doi.org/10.1109/ICIPRM.2004.1442655
    Oishi J, Abe T, Tabuchi H, Utaka K. Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 232-235. TP-29 https://doi.org/10.1109/ICIPRM.2004.1442655
    Oishi, Junya ; Abe, Toshitaka ; Tabuchi, Hiromasa ; Utaka, Katsuyuki. / Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. pp. 232-235
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    abstract = "We fabricated coupled waveguides loaded with long-period grating for gain equalizing device using InGaAsP/InP, and we confirmed fundamental transmittance notch characteristics with a center wavelength of 1540nm and a bandwidth of about 50nm.",
    author = "Junya Oishi and Toshitaka Abe and Hiromasa Tabuchi and Katsuyuki Utaka",
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    AU - Abe, Toshitaka

    AU - Tabuchi, Hiromasa

    AU - Utaka, Katsuyuki

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