Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device

Junya Oishi, Toshitaka Abe, Hiromasa Tabuchi, Katsuyuki Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We fabricated coupled waveguides loaded with long-period grating for gain equalizing device using InGaAsP/InP, and we confirmed fundamental transmittance notch characteristics with a center wavelength of 1540nm and a bandwidth of about 50nm.

Original languageEnglish
Title of host publicationConference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
Pages232-235
Number of pages4
DOIs
Publication statusPublished - 2004 Dec 1
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 312004 Jun 4

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
CountryJapan
CityKagoshima
Period04/5/3104/6/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device'. Together they form a unique fingerprint.

  • Cite this

    Oishi, J., Abe, T., Tabuchi, H., & Utaka, K. (2004). Fabrication of InGaAsP/InP coupled waveguides loaded with long-period grating for gain equalizing device. In Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM (pp. 232-235). [TP-29] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2004.1442655