Abstract
A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
Original language | English |
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Pages (from-to) | 247-252 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 40 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2011 Mar |
Keywords
- Surface conductive layer
- drain current
- field-effect transistor
- metal oxide semiconductor
- transconductance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry