Abstract
A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
| Original language | English |
|---|---|
| Pages (from-to) | 247-252 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 Mar |
Fingerprint
Keywords
- drain current
- field-effect transistor
- metal oxide semiconductor
- Surface conductive layer
- transconductance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3 . / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Liu, Zhi Quan; Mitsuishi, Kazutaka; Furuya, Kazuo; Okushi, Hideyo.
In: Journal of Electronic Materials, Vol. 40, No. 3, 03.2011, p. 247-252.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3
AU - Saito, Takeyasu
AU - Park, Kyung Ho
AU - Hirama, Kazuyuki
AU - Umezawa, Hitoshi
AU - Satoh, Mitsuya
AU - Kawarada, Hiroshi
AU - Liu, Zhi Quan
AU - Mitsuishi, Kazutaka
AU - Furuya, Kazuo
AU - Okushi, Hideyo
PY - 2011/3
Y1 - 2011/3
N2 - A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
AB - A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
KW - drain current
KW - field-effect transistor
KW - metal oxide semiconductor
KW - Surface conductive layer
KW - transconductance
UR - http://www.scopus.com/inward/record.url?scp=79952192798&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952192798&partnerID=8YFLogxK
U2 - 10.1007/s11664-010-1500-1
DO - 10.1007/s11664-010-1500-1
M3 - Article
AN - SCOPUS:79952192798
VL - 40
SP - 247
EP - 252
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 3
ER -