TY - JOUR
T1 - Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3
AU - Saito, Takeyasu
AU - Park, Kyung Ho
AU - Hirama, Kazuyuki
AU - Umezawa, Hitoshi
AU - Satoh, Mitsuya
AU - Kawarada, Hiroshi
AU - Liu, Zhi Quan
AU - Mitsuishi, Kazutaka
AU - Furuya, Kazuo
AU - Okushi, Hideyo
PY - 2011/3/1
Y1 - 2011/3/1
N2 - A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
AB - A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.
KW - Surface conductive layer
KW - drain current
KW - field-effect transistor
KW - metal oxide semiconductor
KW - transconductance
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U2 - 10.1007/s11664-010-1500-1
DO - 10.1007/s11664-010-1500-1
M3 - Article
AN - SCOPUS:79952192798
VL - 40
SP - 247
EP - 252
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 3
ER -