Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi

    Research output: Contribution to journalArticle

    23 Citations (Scopus)

    Abstract

    A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

    Original languageEnglish
    Pages (from-to)247-252
    Number of pages6
    JournalJournal of Electronic Materials
    Volume40
    Issue number3
    DOIs
    Publication statusPublished - 2011 Mar

    Fingerprint

    Diamond
    Boron
    Field effect transistors
    Oxides
    metal oxides
    Electron beams
    Diamonds
    boron
    field effect transistors
    Metals
    diamonds
    electron beams
    Fabrication
    fabrication
    MOSFET devices
    metal oxide semiconductors
    Carrier concentration
    Drain current
    Carrier mobility
    Transconductance

    Keywords

    • drain current
    • field-effect transistor
    • metal oxide semiconductor
    • Surface conductive layer
    • transconductance

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3 . / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Liu, Zhi Quan; Mitsuishi, Kazutaka; Furuya, Kazuo; Okushi, Hideyo.

    In: Journal of Electronic Materials, Vol. 40, No. 3, 03.2011, p. 247-252.

    Research output: Contribution to journalArticle

    Saito, Takeyasu ; Park, Kyung Ho ; Hirama, Kazuyuki ; Umezawa, Hitoshi ; Satoh, Mitsuya ; Kawarada, Hiroshi ; Liu, Zhi Quan ; Mitsuishi, Kazutaka ; Furuya, Kazuo ; Okushi, Hideyo. / Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3 In: Journal of Electronic Materials. 2011 ; Vol. 40, No. 3. pp. 247-252.
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    abstract = "A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.",
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    AU - Kawarada, Hiroshi

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