Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15/cm 3 and the B-doped diamond layer was 1.5 μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2/Vs and the surface carrier concentration was 1.5 × 10 13/cm 2. For the SiO 2 gate (0.76 μm long and 50 μm wide), the maximum measured drain current at a gate voltage of -3.0 V was -75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2O 3 gate (0.64 μm long and 50 μm wide), these features were -86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

Original languageEnglish
Pages (from-to)247-252
Number of pages6
JournalJournal of Electronic Materials
Volume40
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

Keywords

  • Surface conductive layer
  • drain current
  • field-effect transistor
  • metal oxide semiconductor
  • transconductance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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