Fabrication of MgAl 2O 4 thin films on ferromagnetic heusler Alloy Fe 2CrSi by reactive magnetron sputtering

Naoto Fukatani; Keima Inagaki; Kenichiro Mari; Hirohito Fujita; Tetsuta Miyawaki; Kenji Ueda; Hidefumi Asano

doi:10.1143/JJAP.51.02BM04

Fabrication of MgAl ₂O ₄ thin films on ferromagnetic heusler Alloy Fe ₂CrSi by reactive magnetron sputtering

Naoto Fukatani^*, Keima Inagaki, Kenichiro Mari, Hirohito Fujita, Tetsuta Miyawaki, Kenji Ueda, Hidefumi Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Epitaxial MgAl ₂O ₄ thin films were grown on Heusler alloy Fe ₂CrSi by reactive magnetron sputtering of a MgAl ₂ target in an O ₂+Ar atmosphere. To grow MgAl ₂O ₄ on Fe ₂CrSi, we inserted a protective layer of MgAl ₂ between Fe ₂CrSi and MgAl ₂O ₄ to prevent Fe ₂CrSi from being oxidized. Growth of MgAl ₂O ₄ was found to be very sensitive to the MgAl ₂ thickness and PO ₂ during deposition of MgAl ₂O ₄. A strong XRD peak of MgAl ₂O ₄ (004) was observed with an ultrathin (0.2 nm) MgAl ₂ layer. The saturation magnetic moment of Fe ₂CrSi was measured to be 370 emu/cm ³ (1.84μB/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe ₂CrSi/ MgAl ₂O ₄ heterostructure is promising for use in future spintronic devices.

Original language	English
Article number	02BM04
Journal	Japanese journal of applied physics
Volume	51
Issue number	2 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.02BM04
Publication status	Published - 2012 Feb
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of MgAl 2O 4 thin films on ferromagnetic heusler Alloy Fe 2CrSi by reactive magnetron sputtering",

abstract = "Epitaxial MgAl 2O 4 thin films were grown on Heusler alloy Fe 2CrSi by reactive magnetron sputtering of a MgAl 2 target in an O 2+Ar atmosphere. To grow MgAl 2O 4 on Fe 2CrSi, we inserted a protective layer of MgAl 2 between Fe 2CrSi and MgAl 2O 4 to prevent Fe 2CrSi from being oxidized. Growth of MgAl 2O 4 was found to be very sensitive to the MgAl 2 thickness and PO 2 during deposition of MgAl 2O 4. A strong XRD peak of MgAl 2O 4 (004) was observed with an ultrathin (0.2 nm) MgAl 2 layer. The saturation magnetic moment of Fe 2CrSi was measured to be 370 emu/cm 3 (1.84μB/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe 2CrSi/ MgAl 2O 4 heterostructure is promising for use in future spintronic devices.",

author = "Naoto Fukatani and Keima Inagaki and Kenichiro Mari and Hirohito Fujita and Tetsuta Miyawaki and Kenji Ueda and Hidefumi Asano",

year = "2012",

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doi = "10.1143/JJAP.51.02BM04",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Fabrication of MgAl 2O 4 thin films on ferromagnetic heusler Alloy Fe 2CrSi by reactive magnetron sputtering

AU - Fukatani, Naoto

AU - Inagaki, Keima

AU - Mari, Kenichiro

AU - Fujita, Hirohito

AU - Miyawaki, Tetsuta

AU - Ueda, Kenji

AU - Asano, Hidefumi

PY - 2012/2

Y1 - 2012/2

N2 - Epitaxial MgAl 2O 4 thin films were grown on Heusler alloy Fe 2CrSi by reactive magnetron sputtering of a MgAl 2 target in an O 2+Ar atmosphere. To grow MgAl 2O 4 on Fe 2CrSi, we inserted a protective layer of MgAl 2 between Fe 2CrSi and MgAl 2O 4 to prevent Fe 2CrSi from being oxidized. Growth of MgAl 2O 4 was found to be very sensitive to the MgAl 2 thickness and PO 2 during deposition of MgAl 2O 4. A strong XRD peak of MgAl 2O 4 (004) was observed with an ultrathin (0.2 nm) MgAl 2 layer. The saturation magnetic moment of Fe 2CrSi was measured to be 370 emu/cm 3 (1.84μB/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe 2CrSi/ MgAl 2O 4 heterostructure is promising for use in future spintronic devices.

AB - Epitaxial MgAl 2O 4 thin films were grown on Heusler alloy Fe 2CrSi by reactive magnetron sputtering of a MgAl 2 target in an O 2+Ar atmosphere. To grow MgAl 2O 4 on Fe 2CrSi, we inserted a protective layer of MgAl 2 between Fe 2CrSi and MgAl 2O 4 to prevent Fe 2CrSi from being oxidized. Growth of MgAl 2O 4 was found to be very sensitive to the MgAl 2 thickness and PO 2 during deposition of MgAl 2O 4. A strong XRD peak of MgAl 2O 4 (004) was observed with an ultrathin (0.2 nm) MgAl 2 layer. The saturation magnetic moment of Fe 2CrSi was measured to be 370 emu/cm 3 (1.84μB/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe 2CrSi/ MgAl 2O 4 heterostructure is promising for use in future spintronic devices.

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Fabrication of MgAl ₂O ₄ thin films on ferromagnetic heusler Alloy Fe ₂CrSi by reactive magnetron sputtering

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