Epitaxial MgAl 2O 4 thin films were grown on Heusler alloy Fe 2CrSi by reactive magnetron sputtering of a MgAl 2 target in an O 2+Ar atmosphere. To grow MgAl 2O 4 on Fe 2CrSi, we inserted a protective layer of MgAl 2 between Fe 2CrSi and MgAl 2O 4 to prevent Fe 2CrSi from being oxidized. Growth of MgAl 2O 4 was found to be very sensitive to the MgAl 2 thickness and PO 2 during deposition of MgAl 2O 4. A strong XRD peak of MgAl 2O 4 (004) was observed with an ultrathin (0.2 nm) MgAl 2 layer. The saturation magnetic moment of Fe 2CrSi was measured to be 370 emu/cm 3 (1.84μB/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe 2CrSi/ MgAl 2O 4 heterostructure is promising for use in future spintronic devices.
ASJC Scopus subject areas
- Physics and Astronomy(all)