Fabrication of nickel dots using selective electroless deposition on silicon wafer

Tetsuya Osaka, Nao Takano, Shinichi Komaba

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The selective deposition of nickel on n-Si(100) wafer in aqueous solution was investigated. It was confirmed by cross-sectional FE-TEM examination that the deposition of nickel occurred from a solution of nickel ions prepared by excluding the hypophosphitc reducing agent from the conventional electroless nickel plating bath, and that this deposition reaction accompanied the formation of SiO2. This finding shows that the electrons needed to reduce the nickel ions to the metal are supplied directly from the Si wafer. By utilizing this galvanic displacement reaction, nickel metal in the form of minute dots measuring 1 μm in diameter was selectively deposited using a silicon oxide layer as the resist in combination with a two-step process, which consisted of the first step of immersing a Si water into a solution containing nickel ions but no reducing agent to form nuclei of nickel metal, and the second step of immersing the wafer with the nuclei into a conventional electroless nickel plating bath to cause the growth of the nuclei to the desired size.

Original languageEnglish
Pages (from-to)657-658
Number of pages2
JournalChemistry Letters
Issue number7
Publication statusPublished - 1998

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Electroless plating
Nickel
Silicon wafers
Fabrication
Nickel plating
Metals
Reducing Agents
Ions
Silicon oxides
Transmission electron microscopy
Electrons
Water

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Fabrication of nickel dots using selective electroless deposition on silicon wafer. / Osaka, Tetsuya; Takano, Nao; Komaba, Shinichi.

In: Chemistry Letters, No. 7, 1998, p. 657-658.

Research output: Contribution to journalArticle

@article{d798921149414a8facda907a4ff94f84,
title = "Fabrication of nickel dots using selective electroless deposition on silicon wafer",
abstract = "The selective deposition of nickel on n-Si(100) wafer in aqueous solution was investigated. It was confirmed by cross-sectional FE-TEM examination that the deposition of nickel occurred from a solution of nickel ions prepared by excluding the hypophosphitc reducing agent from the conventional electroless nickel plating bath, and that this deposition reaction accompanied the formation of SiO2. This finding shows that the electrons needed to reduce the nickel ions to the metal are supplied directly from the Si wafer. By utilizing this galvanic displacement reaction, nickel metal in the form of minute dots measuring 1 μm in diameter was selectively deposited using a silicon oxide layer as the resist in combination with a two-step process, which consisted of the first step of immersing a Si water into a solution containing nickel ions but no reducing agent to form nuclei of nickel metal, and the second step of immersing the wafer with the nuclei into a conventional electroless nickel plating bath to cause the growth of the nuclei to the desired size.",
author = "Tetsuya Osaka and Nao Takano and Shinichi Komaba",
year = "1998",
language = "English",
pages = "657--658",
journal = "Chemistry Letters",
issn = "0366-7022",
publisher = "Chemical Society of Japan",
number = "7",

}

TY - JOUR

T1 - Fabrication of nickel dots using selective electroless deposition on silicon wafer

AU - Osaka, Tetsuya

AU - Takano, Nao

AU - Komaba, Shinichi

PY - 1998

Y1 - 1998

N2 - The selective deposition of nickel on n-Si(100) wafer in aqueous solution was investigated. It was confirmed by cross-sectional FE-TEM examination that the deposition of nickel occurred from a solution of nickel ions prepared by excluding the hypophosphitc reducing agent from the conventional electroless nickel plating bath, and that this deposition reaction accompanied the formation of SiO2. This finding shows that the electrons needed to reduce the nickel ions to the metal are supplied directly from the Si wafer. By utilizing this galvanic displacement reaction, nickel metal in the form of minute dots measuring 1 μm in diameter was selectively deposited using a silicon oxide layer as the resist in combination with a two-step process, which consisted of the first step of immersing a Si water into a solution containing nickel ions but no reducing agent to form nuclei of nickel metal, and the second step of immersing the wafer with the nuclei into a conventional electroless nickel plating bath to cause the growth of the nuclei to the desired size.

AB - The selective deposition of nickel on n-Si(100) wafer in aqueous solution was investigated. It was confirmed by cross-sectional FE-TEM examination that the deposition of nickel occurred from a solution of nickel ions prepared by excluding the hypophosphitc reducing agent from the conventional electroless nickel plating bath, and that this deposition reaction accompanied the formation of SiO2. This finding shows that the electrons needed to reduce the nickel ions to the metal are supplied directly from the Si wafer. By utilizing this galvanic displacement reaction, nickel metal in the form of minute dots measuring 1 μm in diameter was selectively deposited using a silicon oxide layer as the resist in combination with a two-step process, which consisted of the first step of immersing a Si water into a solution containing nickel ions but no reducing agent to form nuclei of nickel metal, and the second step of immersing the wafer with the nuclei into a conventional electroless nickel plating bath to cause the growth of the nuclei to the desired size.

UR - http://www.scopus.com/inward/record.url?scp=0032396982&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032396982&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032396982

SP - 657

EP - 658

JO - Chemistry Letters

JF - Chemistry Letters

SN - 0366-7022

IS - 7

ER -