Abstract
Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 1 A/B |
| Publication status | Published - 2004 Jan 15 |
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Keywords
- Aqueous solution
- Durability
- Field effect transistor
- Modification
- Organic monolayer
- PH responsibility
- Sensing devices
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability. / Niwa, Daisuke; Homma, Takayuki; Osaka, Tetsuya.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 1 A/B, 15.01.2004.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability
AU - Niwa, Daisuke
AU - Homma, Takayuki
AU - Osaka, Tetsuya
PY - 2004/1/15
Y1 - 2004/1/15
N2 - Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.
AB - Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.
KW - Aqueous solution
KW - Durability
KW - Field effect transistor
KW - Modification
KW - Organic monolayer
KW - PH responsibility
KW - Sensing devices
UR - http://www.scopus.com/inward/record.url?scp=1842759588&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1842759588&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:1842759588
VL - 43
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 A/B
ER -