Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability

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Abstract

Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number1 A/B
Publication statusPublished - 2004 Jan 15

Fingerprint

Ion sensitive field effect transistors
durability
Monolayers
Durability
transistors
field effect transistors
Fabrication
fabrication
Transistors
ions
aqueous solutions
Field effect transistors
electrodes
sensitivity
profiles
Electrodes
Ions
Substrates

Keywords

  • Aqueous solution
  • Durability
  • Field effect transistor
  • Modification
  • Organic monolayer
  • PH responsibility
  • Sensing devices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability",
abstract = "Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.",
keywords = "Aqueous solution, Durability, Field effect transistor, Modification, Organic monolayer, PH responsibility, Sensing devices",
author = "Daisuke Niwa and Takayuki Homma and Tetsuya Osaka",
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language = "English",
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AU - Niwa, Daisuke

AU - Homma, Takayuki

AU - Osaka, Tetsuya

PY - 2004/1/15

Y1 - 2004/1/15

N2 - Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.

AB - Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.

KW - Aqueous solution

KW - Durability

KW - Field effect transistor

KW - Modification

KW - Organic monolayer

KW - PH responsibility

KW - Sensing devices

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