Fabrication of p-β-Fe 1-xMn xSi 2/n-Si heterostructure diode and their electrical and optical properties

T. Takada*, H. Katsumata, Y. Makita, Naoto Kobayashi, M. Hasegawa, S. Uekusa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


We report on the fabrication of p-type β-FeSi 2 layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since our undoped β-FeSi 2 layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into β-FeSi 2 layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe 1-XMn XSi 2(X < approximately 0.1) at room temperature and subsequent annealing at 900 °C for 1-120 min, where FeSi 2 ingots added with Mn (approximately 10 %) were used as starting materials. The other is a 55Mn +-implantation into β-FeSi 2 layers formed by EBD and subsequent annealing at 850 °C for 1-120 min. From van der Pauw measurements, p-type β-Fe 1-XMn XSi 2 layers with the resistivity of 0.0036-0.031 Ω·cm and hole mobility of 11.9-89.0 cm 2/V·sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1997 Mar 311997 Apr 3


OtherProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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