Abstract
We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.
| Original language | English |
|---|---|
| Title of host publication | 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications |
| Pages | 267-268 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2008 |
| Event | 2008 International Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With International Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st International Symposium on Optical Communications - Tokyo, Lake Saiko, Shanon Village Duration: 2008 Aug 2 → 2008 Aug 15 |
Other
| Other | 2008 International Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With International Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st International Symposium on Optical Communications |
|---|---|
| City | Tokyo, Lake Saiko, Shanon Village |
| Period | 08/8/2 → 08/8/15 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
Fabrication of silicon mold for thermal nanoimprint lithography. / Matsui, J.; Takahashi, H.; Xie, N.; Mizuno, Jun; Utaka, Katsuyuki.
2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications. 2008. p. 267-268 4634540.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of silicon mold for thermal nanoimprint lithography
AU - Matsui, J.
AU - Takahashi, H.
AU - Xie, N.
AU - Mizuno, Jun
AU - Utaka, Katsuyuki
PY - 2008
Y1 - 2008
N2 - We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.
AB - We fabricated a silicon mold for thermal Nanoimprint Lithography (NIL) with EB exposure and Deep-RIE. As a result, we obtained that including a grating whose pitch was 230nm with low roughness.
UR - http://www.scopus.com/inward/record.url?scp=56449126978&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=56449126978&partnerID=8YFLogxK
U2 - 10.1109/INOW.2008.4634540
DO - 10.1109/INOW.2008.4634540
M3 - Conference contribution
AN - SCOPUS:56449126978
SN - 9781424426560
SP - 267
EP - 268
BT - 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications
ER -