Abstract
We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.
| Original language | English |
|---|---|
| Title of host publication | Transactions of the Institute of Electronics, Information and Communication Engineers, Section E ( |
| Pages | 334-335 |
| Number of pages | 2 |
| Volume | E70 |
| Edition | 4 |
| Publication status | Published - 1987 Apr |
| Event | Pap from the 1987 Natl Conv IEICE - Tokyo, Jpn Duration: 1987 Mar 26 → 1987 Mar 29 |
Other
| Other | Pap from the 1987 Natl Conv IEICE |
|---|---|
| City | Tokyo, Jpn |
| Period | 87/3/26 → 87/3/29 |
ASJC Scopus subject areas
- Engineering(all)