FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION.

Yukihiro Kiyota, Kouji Numada, Isamu Kato

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.

Original languageEnglish
Title of host publicationTransactions of the Institute of Electronics, Information and Communication Engineers, Section E (
Pages334-335
Number of pages2
VolumeE70
Edition4
Publication statusPublished - 1987 Apr
EventPap from the 1987 Natl Conv IEICE - Tokyo, Jpn
Duration: 1987 Mar 26 → 1987 Mar 29

Other

OtherPap from the 1987 Natl Conv IEICE
CityTokyo, Jpn
Period87/3/26 → 87/3/29

Fingerprint

Chemical vapor deposition
Microwaves
Plasmas
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kiyota, Y., Numada, K., & Kato, I. (1987). FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. In Transactions of the Institute of Electronics, Information and Communication Engineers, Section E ( (4 ed., Vol. E70, pp. 334-335)

FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. / Kiyota, Yukihiro; Numada, Kouji; Kato, Isamu.

Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (. Vol. E70 4. ed. 1987. p. 334-335.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Kiyota, Y, Numada, K & Kato, I 1987, FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. in Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (. 4 edn, vol. E70, pp. 334-335, Pap from the 1987 Natl Conv IEICE, Tokyo, Jpn, 87/3/26.
Kiyota Y, Numada K, Kato I. FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. In Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (. 4 ed. Vol. E70. 1987. p. 334-335
Kiyota, Yukihiro ; Numada, Kouji ; Kato, Isamu. / FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (. Vol. E70 4. ed. 1987. pp. 334-335
@inbook{3897dc2172524ad0ad4cd4a2c84dc254,
title = "FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION.",
abstract = "We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.",
author = "Yukihiro Kiyota and Kouji Numada and Isamu Kato",
year = "1987",
month = "4",
language = "English",
volume = "E70",
pages = "334--335",
booktitle = "Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (",
edition = "4",

}

TY - CHAP

T1 - FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION.

AU - Kiyota, Yukihiro

AU - Numada, Kouji

AU - Kato, Isamu

PY - 1987/4

Y1 - 1987/4

N2 - We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.

AB - We have fabricated SiN films with stoichiometric composition by double tubed coaxial line type microwave plasma chemical vapor deposition and have discussed the effects of the microwave power on the film qualities.

UR - http://www.scopus.com/inward/record.url?scp=0023332227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023332227&partnerID=8YFLogxK

M3 - Chapter

VL - E70

SP - 334

EP - 335

BT - Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (

ER -

Access to Document