Abstract
We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 |
| Pages | 216-217 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju Duration: 2012 Jul 9 → 2012 Jul 13 |
Other
| Other | 25th International Vacuum Nanoelectronics Conference, IVNC 2012 |
|---|---|
| City | Jeju |
| Period | 12/7/9 → 12/7/13 |
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Keywords
- FEM
- FIM
- nanopyramid
- single-atom emitter
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Fabrication of single atom emitters prepared by using surface diffusion of noble metals. / Nakagawa, Tatsuhiro; Rokuta, Eiji; Murata, Hidekazu; Shimoyama, Hiroshi; Oshima, Chuhei.
Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012. 2012. p. 216-217 6316907.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of single atom emitters prepared by using surface diffusion of noble metals
AU - Nakagawa, Tatsuhiro
AU - Rokuta, Eiji
AU - Murata, Hidekazu
AU - Shimoyama, Hiroshi
AU - Oshima, Chuhei
PY - 2012
Y1 - 2012
N2 - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.
AB - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.
KW - FEM
KW - FIM
KW - nanopyramid
KW - single-atom emitter
UR - http://www.scopus.com/inward/record.url?scp=84869027295&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869027295&partnerID=8YFLogxK
U2 - 10.1109/IVNC.2012.6316907
DO - 10.1109/IVNC.2012.6316907
M3 - Conference contribution
AN - SCOPUS:84869027295
SN - 9781467319812
SP - 216
EP - 217
BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
ER -