Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa, Eiji Rokuta, Hidekazu Murata, Hiroshi Shimoyama, Chuhei Oshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

Original languageEnglish
Title of host publicationTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
Pages216-217
Number of pages2
DOIs
Publication statusPublished - 2012
Event25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju
Duration: 2012 Jul 92012 Jul 13

Other

Other25th International Vacuum Nanoelectronics Conference, IVNC 2012
CityJeju
Period12/7/912/7/13

Keywords

  • FEM
  • FIM
  • nanopyramid
  • single-atom emitter

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Nakagawa, T., Rokuta, E., Murata, H., Shimoyama, H., & Oshima, C. (2012). Fabrication of single atom emitters prepared by using surface diffusion of noble metals. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 (pp. 216-217). [6316907] https://doi.org/10.1109/IVNC.2012.6316907