Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki, Hokuto Seo, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    34 Citations (Scopus)

    Abstract

    Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.

    Original languageEnglish
    Pages (from-to)2854-2856
    Number of pages3
    JournalApplied Physics Letters
    Volume81
    Issue number15
    DOIs
    Publication statusPublished - 2002 Oct 7

    Fingerprint

    transistors
    diamonds
    microscopes
    fabrication
    nanofabrication
    nanotechnology
    liquid nitrogen
    methylidyne
    oscillations
    oxygen
    hydrogen
    electrons
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope. / Tachiki, Minoru; Seo, Hokuto; Banno, Tokishige; Sumikawa, Yu; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Applied Physics Letters, Vol. 81, No. 15, 07.10.2002, p. 2854-2856.

    Research output: Contribution to journalArticle

    Tachiki, Minoru ; Seo, Hokuto ; Banno, Tokishige ; Sumikawa, Yu ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope. In: Applied Physics Letters. 2002 ; Vol. 81, No. 15. pp. 2854-2856.
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