Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki, Hokuto Seo, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.

Original languageEnglish
Pages (from-to)2854-2856
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number15
DOIs
Publication statusPublished - 2002 Oct 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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