Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

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    65 Citations (Scopus)

    Abstract

    We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

    Original languageEnglish
    Article number023505
    JournalApplied Physics Letters
    Volume103
    Issue number2
    DOIs
    Publication statusPublished - 2013 Jul 8

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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    Pu, J., Zhang, Y., Wada, Y., Tse-Wei Wang, J., Li, L. J., Iwasa, Y., & Takenobu, T. (2013). Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics. Applied Physics Letters, 103(2), [023505]. https://doi.org/10.1063/1.4813311