Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticle

    61 Citations (Scopus)

    Abstract

    We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

    Original languageEnglish
    Article number023505
    JournalApplied Physics Letters
    Volume103
    Issue number2
    DOIs
    Publication statusPublished - 2013 Jul 8

    Fingerprint

    molybdenum disulfides
    electron mobility
    threshold voltage
    low voltage
    transistors
    electrical properties
    gels
    degradation
    fabrication
    thin films
    electronics
    ions

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Pu, J., Zhang, Y., Wada, Y., Tse-Wei Wang, J., Li, L. J., Iwasa, Y., & Takenobu, T. (2013). Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics. Applied Physics Letters, 103(2), [023505]. https://doi.org/10.1063/1.4813311

    Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics. / Pu, Jiang; Zhang, Yijin; Wada, Yoshifumi; Tse-Wei Wang, Jacob; Li, Lain Jong; Iwasa, Yoshihiro; Takenobu, Taishi.

    In: Applied Physics Letters, Vol. 103, No. 2, 023505, 08.07.2013.

    Research output: Contribution to journalArticle

    Pu, J, Zhang, Y, Wada, Y, Tse-Wei Wang, J, Li, LJ, Iwasa, Y & Takenobu, T 2013, 'Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics', Applied Physics Letters, vol. 103, no. 2, 023505. https://doi.org/10.1063/1.4813311
    Pu, Jiang ; Zhang, Yijin ; Wada, Yoshifumi ; Tse-Wei Wang, Jacob ; Li, Lain Jong ; Iwasa, Yoshihiro ; Takenobu, Taishi. / Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics. In: Applied Physics Letters. 2013 ; Vol. 103, No. 2.
    @article{eb1e2f9fae634124ad073c835f6989f8,
    title = "Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics",
    abstract = "We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5{\%} without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.",
    author = "Jiang Pu and Yijin Zhang and Yoshifumi Wada and {Tse-Wei Wang}, Jacob and Li, {Lain Jong} and Yoshihiro Iwasa and Taishi Takenobu",
    year = "2013",
    month = "7",
    day = "8",
    doi = "10.1063/1.4813311",
    language = "English",
    volume = "103",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "2",

    }

    TY - JOUR

    T1 - Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

    AU - Pu, Jiang

    AU - Zhang, Yijin

    AU - Wada, Yoshifumi

    AU - Tse-Wei Wang, Jacob

    AU - Li, Lain Jong

    AU - Iwasa, Yoshihiro

    AU - Takenobu, Taishi

    PY - 2013/7/8

    Y1 - 2013/7/8

    N2 - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

    AB - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

    UR - http://www.scopus.com/inward/record.url?scp=84880496260&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84880496260&partnerID=8YFLogxK

    U2 - 10.1063/1.4813311

    DO - 10.1063/1.4813311

    M3 - Article

    VL - 103

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 2

    M1 - 023505

    ER -