Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu; Yijin Zhang; Yoshifumi Wada; Jacob Tse-Wei Wang; Lain Jong Li; Yoshihiro Iwasa; Taishi Takenobu

doi:10.1063/1.4813311

Fabrication of stretchable MoS₂ thin-film transistors using elastic ion-gel gate dielectrics

Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

Research output: Contribution to journal › Article › peer-review

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Abstract

We fabricated stretchable molybdenum disulfide thin-film transistors (MoS₂ TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm²/(V·s) and an on/off current ratio of 10⁴ with a notably low threshold voltage (∼1 V). Furthermore, our MoS₂ TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS₂ films for stretchable electronics.

Original language	English
Article number	023505
Journal	Applied Physics Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.4813311
Publication status	Published - 2013 Jul 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4813311

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title = "Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics",

abstract = "We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.",

author = "Jiang Pu and Yijin Zhang and Yoshifumi Wada and {Tse-Wei Wang}, Jacob and Li, {Lain Jong} and Yoshihiro Iwasa and Taishi Takenobu",

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AU - Pu, Jiang

AU - Zhang, Yijin

AU - Wada, Yoshifumi

AU - Tse-Wei Wang, Jacob

AU - Li, Lain Jong

AU - Iwasa, Yoshihiro

AU - Takenobu, Taishi

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

AB - We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.

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Fabrication of stretchable MoS₂ thin-film transistors using elastic ion-gel gate dielectrics

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