Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography

Hideki Kitada, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

Original languageEnglish
Pages (from-to)L 990-L 991
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume31
Issue number7 B
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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