Fabrication of sub-100 nm wires and dots in gaas/algaas multiquantum well using focused ion beam lithography

Hideki Kitada, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

Research output: Contribution to journalArticle


We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

Original languageEnglish
Pages (from-to)L990-L991
JournalJapanese Journal of Applied Physics
Issue number7
Publication statusPublished - 1992
Externally publishedYes



  • CMS resist
  • Dot
  • Focused ion beam
  • GaAs/AIGaAs MOW
  • Lithography
  • Reactive ion beam etching
  • Reactive ion etching
  • Trilevel resist
  • Wire

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this