Fabrication of sub-100 nm wires and dots in gaas/algaas multiquantum well using focused ion beam lithography

Hideki Kitada, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

Research output: Contribution to journalArticle

Abstract

We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

Original languageEnglish
Pages (from-to)L990-L991
JournalJapanese Journal of Applied Physics
Volume31
Issue number7
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Ion beam lithography
Focused ion beams
aluminum gallium arsenides
lithography
ion beams
etching
wire
Wire
Fabrication
fabrication
Wet etching
Reactive ion etching
Ion beams
Masks
Etching
masks
ions

Keywords

  • CMS resist
  • Dot
  • Focused ion beam
  • GaAs/AIGaAs MOW
  • Lithography
  • Reactive ion beam etching
  • Reactive ion etching
  • Trilevel resist
  • Wire

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of sub-100 nm wires and dots in gaas/algaas multiquantum well using focused ion beam lithography. / Kitada, Hideki; Arimoto, Hiroshi; Tackeuchi, Atsushi; Yamaguchi, Yasuhiro; Nakata, Yoshiaki; Endoh, Akira; Muto, Shunichi.

In: Japanese Journal of Applied Physics, Vol. 31, No. 7, 1992, p. L990-L991.

Research output: Contribution to journalArticle

Kitada, Hideki ; Arimoto, Hiroshi ; Tackeuchi, Atsushi ; Yamaguchi, Yasuhiro ; Nakata, Yoshiaki ; Endoh, Akira ; Muto, Shunichi. / Fabrication of sub-100 nm wires and dots in gaas/algaas multiquantum well using focused ion beam lithography. In: Japanese Journal of Applied Physics. 1992 ; Vol. 31, No. 7. pp. L990-L991.
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AU - Nakata, Yoshiaki

AU - Endoh, Akira

AU - Muto, Shunichi

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