Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto, H. Kitada, Atsushi Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages739-740
Number of pages2
Publication statusPublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

Fingerprint

Ion beam lithography
Focused ion beams
Wire
Fabrication
Recovery
Excitons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Arimoto, H., Kitada, H., Tackeuchi, A., Endho, A., Yamaguchi, Y., & Muto, S. (1991). Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. In Conference on Solid State Devices and Materials (pp. 739-740). Tokyo, Japan: Publ by Business Cent for Acad Soc Japan.

Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. / Arimoto, H.; Kitada, H.; Tackeuchi, Atsushi; Endho, A.; Yamaguchi, Y.; Muto, S.

Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. p. 739-740.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arimoto, H, Kitada, H, Tackeuchi, A, Endho, A, Yamaguchi, Y & Muto, S 1991, Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, Tokyo, Japan, pp. 739-740, 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, 91/8/27.
Arimoto H, Kitada H, Tackeuchi A, Endho A, Yamaguchi Y, Muto S. Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. In Conference on Solid State Devices and Materials. Tokyo, Japan: Publ by Business Cent for Acad Soc Japan. 1991. p. 739-740
Arimoto, H. ; Kitada, H. ; Tackeuchi, Atsushi ; Endho, A. ; Yamaguchi, Y. ; Muto, S. / Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. Conference on Solid State Devices and Materials. Tokyo, Japan : Publ by Business Cent for Acad Soc Japan, 1991. pp. 739-740
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AU - Muto, S.

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