Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto, H. Kitada, A. Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

Original languageEnglish
Pages739-740
Number of pages2
Publication statusPublished - 1991 Jan 1
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Arimoto, H., Kitada, H., Tackeuchi, A., Endho, A., Yamaguchi, Y., & Muto, S. (1991). Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography. 739-740. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .