Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Kazuyuki Hirama; Shingo Miyamoto; Hiroki Matsudaira; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1143/JJAP.45.5681

Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Hitoshi Umezawa, Hiroshi Kawarada^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (f_T) of 11 GHz and maximum oscillation frequency (f_max) of 22 GHz. The f _max/f_T ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The f_T of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

Original language	English
Pages (from-to)	5681-5684
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.45.5681
Publication status	Published - 2006 Jul 7

Keywords

Diamond
Field effect transistor
Hydrogen-terminated surface conductive layer
Maximum frequency of oscillation
Parasitic components
T-shaped gate structure

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.5681

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title = "Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors",

abstract = "Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.",

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author = "Kazuyuki Hirama and Shingo Miyamoto and Hiroki Matsudaira and Hitoshi Umezawa and Hiroshi Kawarada",

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T1 - Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

AU - Hirama, Kazuyuki

AU - Miyamoto, Shingo

AU - Matsudaira, Hiroki

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2006/7/7

Y1 - 2006/7/7

N2 - Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

AB - Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

KW - Diamond

KW - Field effect transistor

KW - Hydrogen-terminated surface conductive layer

KW - Maximum frequency of oscillation

KW - Parasitic components

KW - T-shaped gate structure

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Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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