Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Hitoshi Umezawa, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.

Original languageEnglish
Pages (from-to)5681-5684
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7
Publication statusPublished - 2006 Jul 7


  • Diamond
  • Field effect transistor
  • Hydrogen-terminated surface conductive layer
  • Maximum frequency of oscillation
  • Parasitic components
  • T-shaped gate structure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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