Fabrication of the low-resistive p-type ZnO by codoping method

M. Joseph, H. Tabata*, H. Saeki, K. Ueda, T. Kawai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

238 Citations (Scopus)

Abstract

We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.

Original languageEnglish
Pages (from-to)140-148
Number of pages9
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
Duration: 2000 Sep 242000 Sep 27

Keywords

  • Codoping
  • II-VI compounds
  • Non-equilibrium process
  • p-type ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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