Fabrication of the low-resistive p-type ZnO by codoping method

M. Joseph; H. Tabata; H. Saeki; K. Ueda; T. Kawai

doi:10.1016/S0921-4526(01)00419-7

Fabrication of the low-resistive p-type ZnO by codoping method

M. Joseph, H. Tabata^*, H. Saeki, K. Ueda, T. Kawai

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

240 Citations (Scopus)

Abstract

We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N₂O gas through an electron cyclotron resonance (ECR) or RF plasma source. N₂O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 10¹⁹ cm^-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.

Original language	English
Pages (from-to)	140-148
Number of pages	9
Journal	Physica B: Condensed Matter
Volume	302-303
DOIs	https://doi.org/10.1016/S0921-4526(01)00419-7
Publication status	Published - 2001
Externally published	Yes
Event	Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan Duration: 2000 Sept 24 → 2000 Sept 27

Keywords

Codoping
II-VI compounds
Non-equilibrium process
p-type ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)00419-7

Cite this

@article{79834f72f93742ac83ff65caa1f0150a,

title = "Fabrication of the low-resistive p-type ZnO by codoping method",

abstract = "We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent {"}O{"} vacancy from occurring and introduce {"}N{"} as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 {\~N} cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.",

keywords = "Codoping, II-VI compounds, Non-equilibrium process, p-type ZnO",

author = "M. Joseph and H. Tabata and H. Saeki and K. Ueda and T. Kawai",

year = "2001",

doi = "10.1016/S0921-4526(01)00419-7",

language = "English",

volume = "302-303",

pages = "140--148",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors ; Conference date: 24-09-2000 Through 27-09-2000",

}

TY - JOUR

T1 - Fabrication of the low-resistive p-type ZnO by codoping method

AU - Joseph, M.

AU - Tabata, H.

AU - Saeki, H.

AU - Ueda, K.

AU - Kawai, T.

PY - 2001

Y1 - 2001

N2 - We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.

AB - We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.

KW - Codoping

KW - II-VI compounds

KW - Non-equilibrium process

KW - p-type ZnO

UR - http://www.scopus.com/inward/record.url?scp=17144450356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144450356&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00419-7

DO - 10.1016/S0921-4526(01)00419-7

M3 - Conference article

AN - SCOPUS:17144450356

SN - 0921-4526

VL - 302-303

SP - 140

EP - 148

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors

Y2 - 24 September 2000 through 27 September 2000

ER -

Fabrication of the low-resistive p-type ZnO by codoping method

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this