Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Highly-stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain-compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 ×10 13/cm 2; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 μm photoluminescence (PL) emission at room temperature.

Original languageEnglish
Pages (from-to)425-428
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number2
DOIs
Publication statusPublished - 2011 Feb
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
Fabrication
fabrication
Photoluminescence
photoluminescence
Compensation and Redress
indium arsenide
room temperature
Substrates
Temperature

Keywords

  • molecular beam epitaxy
  • quantum dot
  • self-assembly
  • strain compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 2, 02.2011, p. 425-428.

Research output: Contribution to journalArticle

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