Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography

Shugo Ishizuka, Masashi Nakao, Shinro Mashiko, Jun Mizuno, Shuichi Shoji

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.

Original languageEnglish
Pages (from-to)213-217
Number of pages5
JournalJournal of Photopolymer Science and Technology
Volume22
Issue number2
DOIs
Publication statusPublished - 2009

Fingerprint

Nanoimprint lithography
Semiconductor materials
Fabrication
Dry etching
Wet etching
Composite materials
Substrates
Resins
Throughput
gallium arsenide

Keywords

  • Composite semiconductors
  • Gratings
  • Uniformity
  • UV nanoimprint lithography

ASJC Scopus subject areas

  • Materials Chemistry
  • Polymers and Plastics
  • Organic Chemistry

Cite this

Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography. / Ishizuka, Shugo; Nakao, Masashi; Mashiko, Shinro; Mizuno, Jun; Shoji, Shuichi.

In: Journal of Photopolymer Science and Technology, Vol. 22, No. 2, 2009, p. 213-217.

Research output: Contribution to journalArticle

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