Abstract
A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
Original language | English |
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Pages (from-to) | 213-217 |
Number of pages | 5 |
Journal | Journal of Photopolymer Science and Technology |
Volume | 22 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- Composite semiconductors
- Gratings
- UV nanoimprint lithography
- Uniformity
ASJC Scopus subject areas
- Polymers and Plastics
- Organic Chemistry
- Materials Chemistry