Abstract
A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
| Original language | English |
|---|---|
| Pages (from-to) | 213-217 |
| Number of pages | 5 |
| Journal | Journal of Photopolymer Science and Technology |
| Volume | 22 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 |
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Keywords
- Composite semiconductors
- Gratings
- Uniformity
- UV nanoimprint lithography
ASJC Scopus subject areas
- Materials Chemistry
- Polymers and Plastics
- Organic Chemistry
Cite this
Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography. / Ishizuka, Shugo; Nakao, Masashi; Mashiko, Shinro; Mizuno, Jun; Shoji, Shuichi.
In: Journal of Photopolymer Science and Technology, Vol. 22, No. 2, 2009, p. 213-217.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography
AU - Ishizuka, Shugo
AU - Nakao, Masashi
AU - Mashiko, Shinro
AU - Mizuno, Jun
AU - Shoji, Shuichi
PY - 2009
Y1 - 2009
N2 - A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
AB - A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
KW - Composite semiconductors
KW - Gratings
KW - Uniformity
KW - UV nanoimprint lithography
UR - http://www.scopus.com/inward/record.url?scp=70350160114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350160114&partnerID=8YFLogxK
U2 - 10.2494/photopolymer.22.213
DO - 10.2494/photopolymer.22.213
M3 - Article
AN - SCOPUS:70350160114
VL - 22
SP - 213
EP - 217
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
SN - 0914-9244
IS - 2
ER -