Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography

Shugo Ishizuka; Masashi Nakao; Shinro Mashiko; Jun Mizuno; Shuichi Shoji

doi:10.2494/photopolymer.22.213

Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography

Shugo Ishizuka, Masashi Nakao, Shinro Mashiko, Jun Mizuno, Shuichi Shoji

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.

Original language	English
Pages (from-to)	213-217
Number of pages	5
Journal	Journal of Photopolymer Science and Technology
Volume	22
Issue number	2
DOIs	https://doi.org/10.2494/photopolymer.22.213
Publication status	Published - 2009 Oct 26

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Keywords

Composite semiconductors
Gratings
UV nanoimprint lithography
Uniformity

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry
Materials Chemistry

Cite this

Ishizuka, S., Nakao, M., Mashiko, S., Mizuno, J., & Shoji, S. (2009). Fabrication of uniform gratings on composite semiconductors using UV nanoimprint lithography. Journal of Photopolymer Science and Technology, 22(2), 213-217. https://doi.org/10.2494/photopolymer.22.213

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Access to Document

10.2494/photopolymer.22.213