Abstract
A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
| Original language | English |
|---|---|
| Pages (from-to) | 213-217 |
| Number of pages | 5 |
| Journal | Journal of Photopolymer Science and Technology |
| Volume | 22 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 |
Keywords
- Composite semiconductors
- Gratings
- UV nanoimprint lithography
- Uniformity
ASJC Scopus subject areas
- Polymers and Plastics
- Organic Chemistry
- Materials Chemistry