Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

Yukio Fujiwara, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

Research output: Contribution to journalArticle

Abstract

A Ir 4 (CO) 7 + primary ion beam, at energies from 2.5 keV to 10 keV, was used to profile boron-delta layers in Si to investigate the influences of atomic mixing and surface roughness on the degradation of depth resolution. Factorial analyses using the mixing-roughness-information (MRI) model indicated that the influence of the mixing increased as beam energy was reduced below 5 keV in the case of oxygen flooding. It was confirmed that the magnitude of the MRI surface roughness was different from that of the AFM surface roughness. The discrepancy in the magnitude of roughness was examined by considering the difference in sputtering depth as well as the definition of the MRI surface roughness.

Original languageEnglish
Pages (from-to)1338-1340
Number of pages3
JournalApplied Surface Science
Volume255
Issue number4
DOIs
Publication statusPublished - 2008 Dec 15
Externally publishedYes

Keywords

  • Cluster
  • Depth profiling
  • Ir (CO)
  • MRI model
  • Mixing
  • Surface roughness

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Fujiwara, Y., Kondou, K., Watanabe, K., Nonaka, H., Saito, N., Fujimoto, T., Kurokawa, A., Ichimura, S., & Tomita, M. (2008). Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams. Applied Surface Science, 255(4), 1338-1340. https://doi.org/10.1016/j.apsusc.2008.05.014