Failure of the modal gain model in a GaN based laser diode

G. Mohs, T. Aoki, M. Nagai, R. Shimano, M. Kuwata-Gonokami, S. Nakamura

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The optical gain in a Nichia® group-III nitride based blue laser diode has been measured at room temperature using the variable stripe length method and nanosecond excitation. Except for stripe lengths less than 50 μm the device shows considerable deviation from the expected exponential intensity behavior. However, for short stripe lengths large gain values of up to 650 cm-1 are observed when exciting with 20 MW cm-2. Plasma recombination from a quantum confined level is suggested as the gain mechanism.

Original languageEnglish
Pages (from-to)643-648
Number of pages6
JournalSolid State Communications
Volume104
Issue number11
DOIs
Publication statusPublished - 1997 Dec
Externally publishedYes

Keywords

  • A. semiconductors
  • D. optical properties
  • E. nonlinear optics

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Mohs, G., Aoki, T., Nagai, M., Shimano, R., Kuwata-Gonokami, M., & Nakamura, S. (1997). Failure of the modal gain model in a GaN based laser diode. Solid State Communications, 104(11), 643-648. https://doi.org/10.1016/S0038-1098(97)10005-9