Fast etching phenomenon of plasma-silicon nitride films over substrate steps

Atsushi Hiraiwa, Kiichiro Mukai, Seiki Harada, Takeo Yoshimi, Satoru Itoh

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	19-24
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	18
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.18.191
Publication status	Published - 1979
Externally published	Yes

Cite this

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title = "Fast etching phenomenon of plasma-silicon nitride films over substrate steps",

author = "Atsushi Hiraiwa and Kiichiro Mukai and Seiki Harada and Takeo Yoshimi and Satoru Itoh",

year = "1979",

doi = "10.1143/JJAP.18.191",

language = "English",

volume = "18",

pages = "19--24",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Fast etching phenomenon of plasma-silicon nitride films over substrate steps

AU - Hiraiwa, Atsushi

AU - Mukai, Kiichiro

AU - Harada, Seiki

AU - Yoshimi, Takeo

AU - Itoh, Satoru

PY - 1979

Y1 - 1979

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U2 - 10.1143/JJAP.18.191

DO - 10.1143/JJAP.18.191

M3 - Article

AN - SCOPUS:84957186117

VL - 18

SP - 19

EP - 24

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -