Fast nondeterministic random-bit generation using on-chip chaos lasers

Takahisa Harayama, Satoshi Sunada, Kazuyuki Yoshimura, Peter Davis, Ken Tsuzuki, Atsushi Uchida

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

It is shown that broadband chaos suitable for fast nondeterministic random-bit generation in small devices can be achieved in a semiconductor laser with a short external cavity. The design of the device is based on a theoretical model for nondeterministic random-bit generation by amplification of microscopic noise. Moreover, it is demonstrated that bit sequences passing common tests of statistical randomness at rates up to 2.08 Gbits/s can be generated using on-chip lasers with a monolithically integrated external cavity, amplifiers, and a photodetector.

Original languageEnglish
Article number031803
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume83
Issue number3
DOIs
Publication statusPublished - 2011 Mar 15
Externally publishedYes

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chaos
chips
lasers
cavities
photometers
amplifiers
semiconductor lasers
broadband

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Fast nondeterministic random-bit generation using on-chip chaos lasers. / Harayama, Takahisa; Sunada, Satoshi; Yoshimura, Kazuyuki; Davis, Peter; Tsuzuki, Ken; Uchida, Atsushi.

In: Physical Review A - Atomic, Molecular, and Optical Physics, Vol. 83, No. 3, 031803, 15.03.2011.

Research output: Contribution to journalArticle

Harayama, Takahisa ; Sunada, Satoshi ; Yoshimura, Kazuyuki ; Davis, Peter ; Tsuzuki, Ken ; Uchida, Atsushi. / Fast nondeterministic random-bit generation using on-chip chaos lasers. In: Physical Review A - Atomic, Molecular, and Optical Physics. 2011 ; Vol. 83, No. 3.
@article{81248635b5fb4118b6daf71484ef990c,
title = "Fast nondeterministic random-bit generation using on-chip chaos lasers",
abstract = "It is shown that broadband chaos suitable for fast nondeterministic random-bit generation in small devices can be achieved in a semiconductor laser with a short external cavity. The design of the device is based on a theoretical model for nondeterministic random-bit generation by amplification of microscopic noise. Moreover, it is demonstrated that bit sequences passing common tests of statistical randomness at rates up to 2.08 Gbits/s can be generated using on-chip lasers with a monolithically integrated external cavity, amplifiers, and a photodetector.",
author = "Takahisa Harayama and Satoshi Sunada and Kazuyuki Yoshimura and Peter Davis and Ken Tsuzuki and Atsushi Uchida",
year = "2011",
month = "3",
day = "15",
doi = "10.1103/PhysRevA.83.031803",
language = "English",
volume = "83",
journal = "Physical Review A",
issn = "2469-9926",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Fast nondeterministic random-bit generation using on-chip chaos lasers

AU - Harayama, Takahisa

AU - Sunada, Satoshi

AU - Yoshimura, Kazuyuki

AU - Davis, Peter

AU - Tsuzuki, Ken

AU - Uchida, Atsushi

PY - 2011/3/15

Y1 - 2011/3/15

N2 - It is shown that broadband chaos suitable for fast nondeterministic random-bit generation in small devices can be achieved in a semiconductor laser with a short external cavity. The design of the device is based on a theoretical model for nondeterministic random-bit generation by amplification of microscopic noise. Moreover, it is demonstrated that bit sequences passing common tests of statistical randomness at rates up to 2.08 Gbits/s can be generated using on-chip lasers with a monolithically integrated external cavity, amplifiers, and a photodetector.

AB - It is shown that broadband chaos suitable for fast nondeterministic random-bit generation in small devices can be achieved in a semiconductor laser with a short external cavity. The design of the device is based on a theoretical model for nondeterministic random-bit generation by amplification of microscopic noise. Moreover, it is demonstrated that bit sequences passing common tests of statistical randomness at rates up to 2.08 Gbits/s can be generated using on-chip lasers with a monolithically integrated external cavity, amplifiers, and a photodetector.

UR - http://www.scopus.com/inward/record.url?scp=79952730665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952730665&partnerID=8YFLogxK

U2 - 10.1103/PhysRevA.83.031803

DO - 10.1103/PhysRevA.83.031803

M3 - Article

AN - SCOPUS:79952730665

VL - 83

JO - Physical Review A

JF - Physical Review A

SN - 2469-9926

IS - 3

M1 - 031803

ER -