Fast recovery from excitonic absorption bleaching in type-II GaAs/AlGaAs/AlAs tunneling biquantum well

Atsushi Tackeuchi, Tsuguo Inata, Yoshihiro Sugiyama, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume31
Issue number6 A
Publication statusPublished - 1992 Jun 1
Externally publishedYes

Fingerprint

bleaching
Bleaching
aluminum gallium arsenides
recovery
Recovery
Light absorption
escape
Electrons
optical absorption
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fast recovery from excitonic absorption bleaching in type-II GaAs/AlGaAs/AlAs tunneling biquantum well. / Tackeuchi, Atsushi; Inata, Tsuguo; Sugiyama, Yoshihiro; Nakata, Yoshiaki; Nakamura, Satoshi; Muto, Shunichi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 31, No. 6 A, 01.06.1992.

Research output: Contribution to journalArticle

Tackeuchi, Atsushi ; Inata, Tsuguo ; Sugiyama, Yoshihiro ; Nakata, Yoshiaki ; Nakamura, Satoshi ; Muto, Shunichi. / Fast recovery from excitonic absorption bleaching in type-II GaAs/AlGaAs/AlAs tunneling biquantum well. In: Japanese Journal of Applied Physics, Part 2: Letters. 1992 ; Vol. 31, No. 6 A.
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AU - Muto, Shunichi

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