Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well

Atsushi Tackeuchi; Tsuguo Inata; Yoshihiro Sugiyama; Yoshiaki Nakata; Satoshi Nakamura; Shunichi Muto

doi:10.1143/JJAP.31.L669

Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well

Atsushi Tackeuchi^*, Tsuguo Inata, Yoshihiro Sugiyama, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.

Original language	English
Pages (from-to)	L669-L672
Journal	Japanese journal of applied physics
Volume	31
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.31.L669
Publication status	Published - 1992 Jun
Externally published	Yes

Keywords

Bleaching
Exciton
Quantum well
TBQ
Tunneling
Type II

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.31.L669

Cite this

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title = "Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well",

abstract = "We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.",

keywords = "Bleaching, Exciton, Quantum well, TBQ, Tunneling, Type II",

author = "Atsushi Tackeuchi and Tsuguo Inata and Yoshihiro Sugiyama and Yoshiaki Nakata and Satoshi Nakamura and Shunichi Muto",

year = "1992",

month = jun,

doi = "10.1143/JJAP.31.L669",

language = "English",

volume = "31",

pages = "L669--L672",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Sugiyama, Yoshihiro

AU - Nakata, Yoshiaki

AU - Nakamura, Satoshi

AU - Muto, Shunichi

PY - 1992/6

Y1 - 1992/6

N2 - We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.

AB - We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.

KW - Bleaching

KW - Exciton

KW - Quantum well

KW - TBQ

KW - Tunneling

KW - Type II

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well

Abstract

Keywords

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