Fast recovery of excitonic absorption bleaching in tunneling bi-quantum well

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Yoshihiro Sugiyama, Toshio Fujii

Research output: Contribution to journalArticle

Abstract

Excitons in a quantum well of a semiconductor exhibit large optical nonlinearity. Therefore, a quantum well of a semiconductor is regarded as a key to realizing a device which can control light using light. However, the lifetime of excitons, which are generated optically, is several nanoseconds to several tens nanoseconds. Therefore, the nonlinear optical effect including absorption saturation continues for the lifetime of the excitons. To shorten the lifetime of the excitons without disturbing the optical nonlinearity, a new superlattice structure is proposed called the 'tunneling bi-quantum well.' This structure uses the tunneling effect and measures the absorption recovery time. As a result, it was found that in a tunneling bi-quantum well in a GaAs/AlGaAs system with a barrier width of 1.7 nm, the absorption recovery time was as short as 1 ps.

Original languageEnglish
Pages (from-to)25-33
Number of pages9
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume75
Issue number5
Publication statusPublished - 1992 May
Externally publishedYes

Fingerprint

bleaching
Bleaching
Excitons
Semiconductor quantum wells
recovery
excitons
quantum wells
Recovery
life (durability)
nonlinearity
Semiconductor materials
aluminum gallium arsenides
saturation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fast recovery of excitonic absorption bleaching in tunneling bi-quantum well. / Tackeuchi, Atsushi; Inata, Tsuguo; Muto, Shunichi; Sugiyama, Yoshihiro; Fujii, Toshio.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 75, No. 5, 05.1992, p. 25-33.

Research output: Contribution to journalArticle

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