Fast recovery of excitonic absorption bleaching in tunneling Bi‐quantum well

Atsushi Tackeuchi*, Tsuguo Inata, Shunichi Muto, Yoshihiro Sugiyama, Toshio Fujii

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Excitons in a quantum well of a semiconductor exhibit large optical nonlinearity. Therefore, a quantum well of a semiconductor is regarded as a key to realizing a device which can control light using light. However, the lifetime of excitons, which are generated optically, is several nanoseconds to several tens nanoseconds. Therefore, the nonlinear optical effect including absorption saturation continues for the lifetime of the excitons. To shorten the lifetime of the excitons without disturbing the optical nonlinearity, a new superlattice structure is proposed called the “tunneling bi‐quantum well.” This structure uses the tunneling effect and measures the absorption recovery time. As a result, it was found that in a tunneling bi‐quantum well in a GaAs/AlGaAs system with a barrier width of 1.7 nm, the absorption recovery time was as short as 1 ps.

Original languageEnglish
Pages (from-to)25-33
Number of pages9
JournalElectronics and Communications in Japan (Part II: Electronics)
Issue number5
Publication statusPublished - 1992
Externally publishedYes


  • AlGaAs
  • GaAs
  • Tunnel
  • bleaching
  • exciton
  • quantum well

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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