Fast recovery of excitonic absorption peaks in tunneling bi-quantum-well structures

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, Toshio Fujii

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Fast recovery of the excitonic absorption peak in 'tunneling bi-quantum-well structures' is proposed and demonstrated for the first time. A tunneling bi-quantum-well consists of the repeated structure of narrow and wide wells coupled quantum-mechanically, enabling photo-excited carriers in the narrow well to tunnel toward the wide well with a relaxation time much faster than the radiative recombination time of carriers. The recovery time was reduced to 18 ps using the 4.0 nm-thick tunneling barrier and strongly depends on the barrier thickness as would be expected from electron tunneling.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume28
Issue number7
Publication statusPublished - 1989 Jul
Externally publishedYes

Fingerprint

Semiconductor quantum wells
recovery
quantum wells
Recovery
Electron tunneling
Relaxation time
Tunnels
radiative recombination
electron tunneling
tunnels
relaxation time

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fast recovery of excitonic absorption peaks in tunneling bi-quantum-well structures. / Tackeuchi, Atsushi; Muto, Shunichi; Inata, Tsuguo; Fujii, Toshio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 28, No. 7, 07.1989.

Research output: Contribution to journalArticle

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