FBC's potential of 6F2 single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin

Fumiyoshi Matsuoka, Takashi Ohsawa, Tomoki Higashi, Hironobu Furuhashi, Kosuke Hatsuda, Katsuyuki Fujita, Ryo Fukuda, Nobuyuki Ikumi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Akihiro Nitayama, Yohji Watanabe

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

A 6F2 single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC's spacers can be optimized for making the SSM as large as 8μA at ±4.5σ without sacrificing the retention time.

Original languageEnglish
Article number4418857
Pages (from-to)39-42
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Matsuoka, F., Ohsawa, T., Higashi, T., Furuhashi, H., Hatsuda, K., Fujita, K., Fukuda, R., Ikumi, N., Shino, T., Minami, Y., Nakajima, H., Hamamoto, T., Nitayama, A., & Watanabe, Y. (2007). FBC's potential of 6F2 single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin. Technical Digest - International Electron Devices Meeting, IEDM, 39-42. [4418857]. https://doi.org/10.1109/IEDM.2007.4418857