TY - GEN
T1 - Feasibility study of all-SiC pressure sensor fabrication without deep etching
AU - Mu, Fengwen
AU - Sun, Yechao
AU - Shang, Haiping
AU - Wang, Yinghui
AU - Suga, Tadatomo
AU - Wang, Weibing
AU - Chen, Dapeng
PY - 2018/6/6
Y1 - 2018/6/6
N2 - A novel approach to achieving an all-SiC pressure sensor for harsh environment applications has been proposed. A combination of short-Time etching, wafer thinning and wafer bonding processes is employed to form a sealed vacuum cavity structure in order to avoid an undesirable deep etching process. To demonstrate its feasibility, the thinning of SiC wafer and the bonding between a SiC patterned wafer and a bare wafer have been attempted. The SiC wafer could be thinned down to 60 μm in thickness via bonding to a Si wafer for support, and the patterned SiC wafer could be successfully bonded to a bare SiC wafer with a seamless interface, which indicates the feasibility of this approach.
AB - A novel approach to achieving an all-SiC pressure sensor for harsh environment applications has been proposed. A combination of short-Time etching, wafer thinning and wafer bonding processes is employed to form a sealed vacuum cavity structure in order to avoid an undesirable deep etching process. To demonstrate its feasibility, the thinning of SiC wafer and the bonding between a SiC patterned wafer and a bare wafer have been attempted. The SiC wafer could be thinned down to 60 μm in thickness via bonding to a Si wafer for support, and the patterned SiC wafer could be successfully bonded to a bare SiC wafer with a seamless interface, which indicates the feasibility of this approach.
KW - all-SiC pressure sensor
KW - feasibility
KW - interface
KW - thinning
KW - wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=85048771585&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048771585&partnerID=8YFLogxK
U2 - 10.23919/ICEP.2018.8374649
DO - 10.23919/ICEP.2018.8374649
M3 - Conference contribution
AN - SCOPUS:85048771585
T3 - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
SP - 558
EP - 561
BT - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
Y2 - 17 April 2018 through 21 April 2018
ER -