Feasibility study of all-SiC pressure sensor fabrication without deep etching

Fengwen Mu, Yechao Sun, Haiping Shang, Yinghui Wang, Tadatomo Suga, Weibing Wang, Dapeng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel approach to achieving an all-SiC pressure sensor for harsh environment applications has been proposed. A combination of short-Time etching, wafer thinning and wafer bonding processes is employed to form a sealed vacuum cavity structure in order to avoid an undesirable deep etching process. To demonstrate its feasibility, the thinning of SiC wafer and the bonding between a SiC patterned wafer and a bare wafer have been attempted. The SiC wafer could be thinned down to 60 μm in thickness via bonding to a Si wafer for support, and the patterned SiC wafer could be successfully bonded to a bare SiC wafer with a seamless interface, which indicates the feasibility of this approach.

Original languageEnglish
Title of host publication2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages558-561
Number of pages4
ISBN (Electronic)9784990218850
DOIs
Publication statusPublished - 2018 Jun 6
Externally publishedYes
Event2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan
Duration: 2018 Apr 172018 Apr 21

Publication series

Name2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
CountryJapan
CityKuwana, Mie
Period18/4/1718/4/21

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Keywords

  • all-SiC pressure sensor
  • feasibility
  • interface
  • thinning
  • wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics

Cite this

Mu, F., Sun, Y., Shang, H., Wang, Y., Suga, T., Wang, W., & Chen, D. (2018). Feasibility study of all-SiC pressure sensor fabrication without deep etching. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 (pp. 558-561). (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2018.8374649