Feasibility Study of TiOx Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications

Shaili Falina, Kyosuke Tanabe, Yutaro Iyama, Kaito Tadenuma, Te Bi, Yu Hao Chang, Asrulnizam Abd Manaf, Mohd Syamsul, Hiroshi Kawarada

Research output: Contribution to journalArticlepeer-review

Abstract

The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (gm) to 3000 μA mm−1 and 11.3 mS mm−1, respectively. Furthermore, the scaling gm behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The gm is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm2 (V s)−1 is estimated to be 3–5 μF cm−2 across the channel length which is adequate for biosensor applications.

Original languageEnglish
Article number2000634
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume217
Issue number23
DOIs
Publication statusPublished - 2020 Dec

Keywords

  • TiO
  • biosensors
  • diamond
  • encapsulation
  • solution-gate field-effect transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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