Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada; Masato Kakihana

doi:10.1063/1.1536010

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo^*, Keisuke Saito, Minoru Osada, Masato Kakihana

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO₃∥(111)SrTiO₃ substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi₄Ti₃O₁₂ thin films was smaller as compared to the Nd substituted thin films.

Original language	English
Pages (from-to)	1707-1712
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.1536010
Publication status	Published - 2003 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition. / Kojima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru; Kakihana, Masato.

In: Journal of Applied Physics, Vol. 93, No. 3, 01.02.2003, p. 1707-1712.

Research output: Contribution to journal › Article › peer-review

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abstract = "Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.",

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AU - Saito, Keisuke

AU - Osada, Minoru

AU - Kakihana, Masato

PY - 2003/2/1

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AB - Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.

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Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition

Abstract

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