Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada; Masato Kakihana

doi:10.1063/1.1536010

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Masato Kakihana

Research output: Contribution to journal › Article

58 Citations (Scopus)

Abstract

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO₃∥(111)SrTiO₃ substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi₄Ti₃O₁₂ thin films was smaller as compared to the Nd substituted thin films.

Original language	English
Pages (from-to)	1707-1712
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.1536010
Publication status	Published - 2003 Feb 1
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

Kojima, T., Watanabe, T., Funakubo, H., Saito, K., Osada, M., & Kakihana, M. (2003). Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 93(3), 1707-1712. https://doi.org/10.1063/1.1536010

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10.1063/1.1536010