Abstract
Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.
Original language | English |
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Pages (from-to) | 1707-1712 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2003 Feb 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)