Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada; Masato Kakihana

doi:10.1063/1.1536010

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Masato Kakihana

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO₃∥(111)SrTiO₃ substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi₄Ti₃O₁₂ thin films was smaller as compared to the Nd substituted thin films.

Original language	English
Pages (from-to)	1707-1712
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.1536010
Publication status	Published - 2003 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition. / Kojima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru; Kakihana, Masato.

In: Journal of Applied Physics, Vol. 93, No. 3, 01.02.2003, p. 1707-1712.

Research output: Contribution to journal › Article › peer-review

@article{4f47b12d8e914d62a27a1f4e5b72685d,

title = "Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition",

abstract = "Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.",

author = "Takashi Kojima and Takayuki Watanabe and Hiroshi Funakubo and Keisuke Saito and Minoru Osada and Masato Kakihana",

year = "2003",

month = feb,

day = "1",

doi = "10.1063/1.1536010",

language = "English",

volume = "93",

pages = "1707--1712",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

AU - Kojima, Takashi

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Saito, Keisuke

AU - Osada, Minoru

AU - Kakihana, Masato

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.

AB - Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.

UR - http://www.scopus.com/inward/record.url?scp=0037320226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037320226&partnerID=8YFLogxK

U2 - 10.1063/1.1536010

DO - 10.1063/1.1536010

M3 - Article

AN - SCOPUS:0037320226

VL - 93

SP - 1707

EP - 1712

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -