Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Masato Kakihana

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.

Original languageEnglish
Pages (from-to)1707-1712
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number3
DOIs
Publication statusPublished - 2003 Feb 1
Externally publishedYes

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metalorganic chemical vapor deposition
thin films
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition. / Kojima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru; Kakihana, Masato.

In: Journal of Applied Physics, Vol. 93, No. 3, 01.02.2003, p. 1707-1712.

Research output: Contribution to journalArticle

Kojima, Takashi ; Watanabe, Takayuki ; Funakubo, Hiroshi ; Saito, Keisuke ; Osada, Minoru ; Kakihana, Masato. / Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 3. pp. 1707-1712.
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