Abstract
Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 1707-1712 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2003 Feb 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Ferroelectric properties of lanthanide-substituted Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> epitaxial thin films grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.
Cite this
Kojima, T., Watanabe, T., Funakubo, H., Saito, K., Osada, M., & Kakihana, M. (2003). Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 93(3), 1707-1712. https://doi.org/10.1063/1.1536010