Ferromagnetic Schottky junctions using diamond semiconductors

K. Ueda*, T. Soumiya, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Schottky junctions, formed using various ferromagnetic metals and alloys, were fabricated on hydrogen-terminated (H-terminated) diamond, and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (φ B) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. φ B for Ni and NiFe, which have higher work functions above 5 eV, is lower than φ B for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.

Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalDiamond and Related Materials
Publication statusPublished - 2012 May
Externally publishedYes


  • CVD
  • Diamond films
  • Ferromagnet
  • Schottky junctions
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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