Ferromagnetic Schottky junctions using diamond semiconductors

Schottky junctions, formed using various ferromagnetic metals and alloys, were fabricated on hydrogen-terminated (H-terminated) diamond, and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (φ _B) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. φ _B for Ni and NiFe, which have higher work functions above 5 eV, is lower than φ _B for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.