Ferromagnetic Schottky junctions using half-metallic Co2MnSi/ diamond heterostructures

K. Ueda; T. Soumiya; M. Nishiwaki; H. Asano

doi:10.1063/1.4817295

Ferromagnetic Schottky junctions using half-metallic Co₂MnSi/ diamond heterostructures

K. Ueda, T. Soumiya, M. Nishiwaki, H. Asano

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We demonstrate half-metallic Heusler Co₂MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co₂MnSi/diamond interfaces. The Co₂MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co₂MnSi films. Schottky junctions formed using the Co₂MnSi/diamond heterostructures at 400°C showed clear rectification properties with a rectification ratio of ∼10 ³. The Schottky barrier heights of the Co₂MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co ₂MnSi is a promising spin source for spin injection into diamond.

Original language	English
Article number	052408
Journal	Applied Physics Letters
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.4817295
Publication status	Published - 2013 Jul 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ferromagnetic Schottky junctions using half-metallic Co2MnSi/ diamond heterostructures",

abstract = "We demonstrate half-metallic Heusler Co2MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co2MnSi/diamond interfaces. The Co2MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co2MnSi films. Schottky junctions formed using the Co2MnSi/diamond heterostructures at 400°C showed clear rectification properties with a rectification ratio of ∼10 3. The Schottky barrier heights of the Co2MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co 2MnSi is a promising spin source for spin injection into diamond.",

author = "K. Ueda and T. Soumiya and M. Nishiwaki and H. Asano",

note = "Funding Information: This work was partly supported by Grants-in-Aids for Science Research (Nos. 22760250, 23656214, and 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan, the scholar project of the Toyota Physical and Chemical Research Institute, and the Tatematsu Foundation.",

year = "2013",

month = jul,

day = "29",

doi = "10.1063/1.4817295",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

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TY - JOUR

T1 - Ferromagnetic Schottky junctions using half-metallic Co2MnSi/ diamond heterostructures

AU - Ueda, K.

AU - Soumiya, T.

AU - Nishiwaki, M.

AU - Asano, H.

N1 - Funding Information: This work was partly supported by Grants-in-Aids for Science Research (Nos. 22760250, 23656214, and 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan, the scholar project of the Toyota Physical and Chemical Research Institute, and the Tatematsu Foundation.

PY - 2013/7/29

Y1 - 2013/7/29

N2 - We demonstrate half-metallic Heusler Co2MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co2MnSi/diamond interfaces. The Co2MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co2MnSi films. Schottky junctions formed using the Co2MnSi/diamond heterostructures at 400°C showed clear rectification properties with a rectification ratio of ∼10 3. The Schottky barrier heights of the Co2MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co 2MnSi is a promising spin source for spin injection into diamond.

AB - We demonstrate half-metallic Heusler Co2MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co2MnSi/diamond interfaces. The Co2MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co2MnSi films. Schottky junctions formed using the Co2MnSi/diamond heterostructures at 400°C showed clear rectification properties with a rectification ratio of ∼10 3. The Schottky barrier heights of the Co2MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co 2MnSi is a promising spin source for spin injection into diamond.

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U2 - 10.1063/1.4817295

DO - 10.1063/1.4817295

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VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 052408

ER -

Ferromagnetic Schottky junctions using half-metallic Co₂MnSi/ diamond heterostructures

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