We demonstrate half-metallic Heusler Co2MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co2MnSi/diamond interfaces. The Co2MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co2MnSi films. Schottky junctions formed using the Co2MnSi/diamond heterostructures at 400°C showed clear rectification properties with a rectification ratio of ∼10 3. The Schottky barrier heights of the Co2MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co 2MnSi is a promising spin source for spin injection into diamond.
|Journal||Applied Physics Letters|
|Publication status||Published - 2013 Jul 29|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)