FET properties of surface silylated single wall carbon nanotubes

Ryotaro Kumashiro; Nobuya Hiroshiba; Hirotaka Ohashi; Takeshi Akasaka; Yutaka Maeda; Shinzo Suzuki; Yohji Achiba; Rikizo Hatakeyama; Katsumi Tanigaki

FET properties of surface silylated single wall carbon nanotubes

Ryotaro Kumashiro^*, Nobuya Hiroshiba, Hirotaka Ohashi, Takeshi Akasaka, Yutaka Maeda, Shinzo Suzuki, Yohji Achiba, Rikizo Hatakeyama, Katsumi Tanigaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

Original language	English
Title of host publication	Nanowires and Carbon Nanotubes
Subtitle of host publication	Science and Applications
Pages	142-147
Number of pages	6
Volume	963
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 MRS Fall Meeting - Boston, MA Duration: 2006 Nov 27 → 2006 Dec 1

Other

Other	2006 MRS Fall Meeting
City	Boston, MA
Period	06/11/27 → 06/12/1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "FET properties of surface silylated single wall carbon nanotubes",

abstract = "Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.",

author = "Ryotaro Kumashiro and Nobuya Hiroshiba and Hirotaka Ohashi and Takeshi Akasaka and Yutaka Maeda and Shinzo Suzuki and Yohji Achiba and Rikizo Hatakeyama and Katsumi Tanigaki",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "9781604234152",

volume = "963",

pages = "142--147",

booktitle = "Nanowires and Carbon Nanotubes",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

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TY - GEN

T1 - FET properties of surface silylated single wall carbon nanotubes

AU - Kumashiro, Ryotaro

AU - Hiroshiba, Nobuya

AU - Ohashi, Hirotaka

AU - Akasaka, Takeshi

AU - Maeda, Yutaka

AU - Suzuki, Shinzo

AU - Achiba, Yohji

AU - Hatakeyama, Rikizo

AU - Tanigaki, Katsumi

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

AB - Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique, and presented the comparison of the FET properties between separated individual and spread-sheet samples. From the results of FET measurements for both separated individual and spread-sheet samples, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

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M3 - Conference contribution

AN - SCOPUS:40949102695

SN - 9781604234152

VL - 963

SP - 142

EP - 147

BT - Nanowires and Carbon Nanotubes

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

FET properties of surface silylated single wall carbon nanotubes

Abstract

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ASJC Scopus subject areas

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