Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs

Koji Onomitsu, Atsushi Kawaharazuka, Takehito Okabe, Toshiki Makimoto, Hisao Saito, Yoshiji Horikoshi

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.

    Original languageEnglish
    Pages (from-to)5503-5506
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume41
    Issue number9
    Publication statusPublished - 2002 Sep

    Fingerprint

    Excitons
    nitrogen atoms
    Photoluminescence
    Electric fields
    excitons
    Nitrogen
    photoluminescence
    Atoms
    electric fields
    trapping
    traps
    Electrons
    Substrates
    electrons

    Keywords

    • Atomic-layer doping
    • Electric field dependence
    • GaAs
    • Isoelectronic traps
    • MOVPE
    • Nitrogen pairs
    • Photoluminescence

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs. / Onomitsu, Koji; Kawaharazuka, Atsushi; Okabe, Takehito; Makimoto, Toshiki; Saito, Hisao; Horikoshi, Yoshiji.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 9, 09.2002, p. 5503-5506.

    Research output: Contribution to journalArticle

    Onomitsu, Koji ; Kawaharazuka, Atsushi ; Okabe, Takehito ; Makimoto, Toshiki ; Saito, Hisao ; Horikoshi, Yoshiji. / Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 9. pp. 5503-5506.
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    AU - Saito, Hisao

    AU - Horikoshi, Yoshiji

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