Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs

Koji Onomitsu, Atsushi Kawaharazuka, Takehito Okabe, Toshiki Makimoto, Hisao Saito, Yoshiji Horikoshi

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    Abstract

    Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.

    Original languageEnglish
    Pages (from-to)5503-5506
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume41
    Issue number9
    Publication statusPublished - 2002 Sep

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    Keywords

    • Atomic-layer doping
    • Electric field dependence
    • GaAs
    • Isoelectronic traps
    • MOVPE
    • Nitrogen pairs
    • Photoluminescence

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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