Field-effect transistors based on poly(p-phenylenevinylene) derivatives

Masanori Muratsubaki, Yukio Furukawa, Takanobu Noguchi, Toshihiro Ohnishi, Eiichi Fujiwara, Hirokazu Tada

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Abstract

Field-effect mobilities and on/off current ratios have been determined for the organic field-effect transistors (OFETs) based on three kinds of poly(p-phenylenevinylene) derivatives. The best transistor performance has been obtained for poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV). The hole mobility and the on/off ratio obtained for the MEH-PPV OFET are 3.6 × 10-4 cm2/Vs and 1.5 × 10 6, respectively. These OFETs operate stably in the atmosphere as well as in vacuum.

Original languageEnglish
Pages (from-to)1480-1481
Number of pages2
JournalChemistry Letters
Volume33
Issue number11
DOIs
Publication statusPublished - 2004 Nov 5

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ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Muratsubaki, M., Furukawa, Y., Noguchi, T., Ohnishi, T., Fujiwara, E., & Tada, H. (2004). Field-effect transistors based on poly(p-phenylenevinylene) derivatives. Chemistry Letters, 33(11), 1480-1481. https://doi.org/10.1246/cl.2004.1480