Field-emission-display basic structure using Si-doped AlN

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages249-250
Number of pages2
Volume2003-January
ISBN (Print)4818195154, 9784818195158
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event16th International Vacuum Microelectronics Conference, IVMC 2003 - Toyonaka, Osaka, Japan
Duration: 2003 Jul 72003 Jul 11

Other

Other16th International Vacuum Microelectronics Conference, IVMC 2003
CountryJapan
CityToyonaka, Osaka
Period03/7/703/7/11

Fingerprint

Field emission displays
field emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Taniyasu, Y., Kasu, M., Makimoto, T., & Kobayashi, N. (2003). Field-emission-display basic structure using Si-doped AlN. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (Vol. 2003-January, pp. 249-250). [1223077] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVMC.2003.1223077

Field-emission-display basic structure using Si-doped AlN. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 249-250 1223077.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Taniyasu, Y, Kasu, M, Makimoto, T & Kobayashi, N 2003, Field-emission-display basic structure using Si-doped AlN. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. vol. 2003-January, 1223077, Institute of Electrical and Electronics Engineers Inc., pp. 249-250, 16th International Vacuum Microelectronics Conference, IVMC 2003, Toyonaka, Osaka, Japan, 03/7/7. https://doi.org/10.1109/IVMC.2003.1223077
Taniyasu Y, Kasu M, Makimoto T, Kobayashi N. Field-emission-display basic structure using Si-doped AlN. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 249-250. 1223077 https://doi.org/10.1109/IVMC.2003.1223077
Taniyasu, Yoshitaka ; Kasu, Makoto ; Makimoto, Toshiki ; Kobayashi, Naoki. / Field-emission-display basic structure using Si-doped AlN. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 249-250
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