Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.1689398

Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

92 Citations (Scopus)

Abstract

A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

Original language	English
Pages (from-to)	2115-2117
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	12
DOIs	https://doi.org/10.1063/1.1689398
Publication status	Published - 2004 Mar 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1689398

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@article{b996104ae0114ed299b31c67b82cfa23,

title = "Field emission properties of heavily Si-doped AIN in triode-type display structure",

abstract = "A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.",

author = "Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimoto",

year = "2004",

month = mar,

day = "22",

doi = "10.1063/1.1689398",

language = "English",

volume = "84",

pages = "2115--2117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Field emission properties of heavily Si-doped AIN in triode-type display structure

AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2004/3/22

Y1 - 2004/3/22

N2 - A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

AB - A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

UR - http://www.scopus.com/inward/record.url?scp=1942444663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942444663&partnerID=8YFLogxK

U2 - 10.1063/1.1689398

DO - 10.1063/1.1689398

M3 - Article

AN - SCOPUS:1942444663

SN - 0003-6951

VL - 84

SP - 2115

EP - 2117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Field emission properties of heavily Si-doped AIN in triode-type display structure

Abstract

ASJC Scopus subject areas

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