Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticlepeer-review

87 Citations (Scopus)

Abstract

A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

Original languageEnglish
Pages (from-to)2115-2117
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
Publication statusPublished - 2004 Mar 22
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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