Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

Original languageEnglish
Pages (from-to)2115-2117
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
Publication statusPublished - 2004 Mar 22
Externally publishedYes

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triodes
field emission
grids
mesh
emitters
anodes
electric fields
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Field emission properties of heavily Si-doped AIN in triode-type display structure. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 84, No. 12, 22.03.2004, p. 2115-2117.

Research output: Contribution to journalArticle

Taniyasu, Yoshitaka ; Kasu, Makoto ; Makimoto, Toshiki. / Field emission properties of heavily Si-doped AIN in triode-type display structure. In: Applied Physics Letters. 2004 ; Vol. 84, No. 12. pp. 2115-2117.
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