TY - GEN
T1 - Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices
AU - Tokuda, Shohei
AU - Takayanagi, Shinji
AU - Matsukawa, Mami
AU - Yanagitani, Takahiko
N1 - Publisher Copyright:
© 2017 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/10/31
Y1 - 2017/10/31
N2 - ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.
AB - ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.
KW - C-axis tilted film
KW - Electromechanical coupling coefficient
KW - RF magnetron sputtering
KW - SAW
KW - ScAlN
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U2 - 10.1109/ULTSYM.2017.8092072
DO - 10.1109/ULTSYM.2017.8092072
M3 - Conference contribution
AN - SCOPUS:85039455606
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017
PB - IEEE Computer Society
T2 - 2017 IEEE International Ultrasonics Symposium, IUS 2017
Y2 - 6 September 2017 through 9 September 2017
ER -