Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda; Shinji Takayanagi; Mami Matsukawa; Takahiko Yanagitani

doi:10.1109/ULTSYM.2017.8092072

Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K². In previous study, we analyzed K² in c-axis-tilted Sc_0.4Al_0.6N film / diamond substrate. The K² of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K² of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K² in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K² was expected to improve the crystalline orientation of the ScAlN films.

Original language	English
Title of host publication	2017 IEEE International Ultrasonics Symposium, IUS 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538633830
DOIs	https://doi.org/10.1109/ULTSYM.2017.8092072
Publication status	Published - 2017 Oct 31
Event	2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: 2017 Sep 6 → 2017 Sep 9

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Other

Other	2017 IEEE International Ultrasonics Symposium, IUS 2017
Country/Territory	United States
City	Washington
Period	17/9/6 → 17/9/9

Keywords

C-axis tilted film
Electromechanical coupling coefficient
RF magnetron sputtering
SAW
ScAlN

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2017.8092072

Cite this

Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. / Tokuda, Shohei; Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092072 (IEEE International Ultrasonics Symposium, IUS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tokuda, S, Takayanagi, S, Matsukawa, M & Yanagitani, T 2017, Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092072, IEEE International Ultrasonics Symposium, IUS, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092072

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title = "Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices",

abstract = "ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.",

keywords = "C-axis tilted film, Electromechanical coupling coefficient, RF magnetron sputtering, SAW, ScAlN",

author = "Shohei Tokuda and Shinji Takayanagi and Mami Matsukawa and Takahiko Yanagitani",

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doi = "10.1109/ULTSYM.2017.8092072",

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AB - ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.

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Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

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