Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Abstract

    ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.

    Original languageEnglish
    Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538633830
    DOIs
    Publication statusPublished - 2017 Oct 31
    Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    Duration: 2017 Sep 6 → 2017 Sep 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    CountryUnited States
    CityWashington
    Period17/9/6 → 17/9/9

    Fingerprint

    sapphire
    coupling coefficients
    diamond films
    insertion loss
    diamonds

    Keywords

    • C-axis tilted film
    • Electromechanical coupling coefficient
    • RF magnetron sputtering
    • SAW
    • ScAlN

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

    Tokuda, S., Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2017). Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092072] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092072

    Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. / Tokuda, Shohei; Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

    2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092072.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Tokuda, S, Takayanagi, S, Matsukawa, M & Yanagitani, T 2017, Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092072, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092072
    Tokuda S, Takayanagi S, Matsukawa M, Yanagitani T. Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society. 2017. 8092072 https://doi.org/10.1109/ULTSYM.2017.8092072
    Tokuda, Shohei ; Takayanagi, Shinji ; Matsukawa, Mami ; Yanagitani, Takahiko. / Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017.
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    abstract = "ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9{\%} at Ψ = 90° and 3.7{\%} at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.",
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    author = "Shohei Tokuda and Shinji Takayanagi and Mami Matsukawa and Takahiko Yanagitani",
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