Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ScAlN films are attractive for SAW devices with high electromechanical coupling coefficient K2. In previous study, we analyzed K2 in c-axis-tilted Sc0.4Al0.6N film / diamond substrate. The K2 of c-axis-tilted film was increased, compared with that of the c-axis-normally-oriented film. However, it is difficult to perform experiments because diamond substrate are very expensive. In this study, K2 of SAWs in c-axis tilted ScAlN film / R-sapphire substrate were theoretically analyzed. The K2 in Rayleigh mode SAW were found to be 3.9% at Ψ = 90° and 3.7% at Ψ = 54°. Next, c-axis tilted ScAlN films were grown on sapphire substrate. c-Axis-33°-tilted ScAlN film was obtained on the R-plane sapphire. Then, IDT/ c-axis-33°-tilted ScAlN / R-sapphire structure was fabricated. The insertion loss of the structure was 34.4 dB. High K2 was expected to improve the crystalline orientation of the ScAlN films.

Original languageEnglish
Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781538633830
DOIs
Publication statusPublished - 2017 Oct 31
Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
Duration: 2017 Sep 62017 Sep 9

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2017 IEEE International Ultrasonics Symposium, IUS 2017
Country/TerritoryUnited States
CityWashington
Period17/9/617/9/9

Keywords

  • C-axis tilted film
  • Electromechanical coupling coefficient
  • RF magnetron sputtering
  • SAW
  • ScAlN

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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