Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

    Original languageEnglish
    Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538633830
    DOIs
    Publication statusPublished - 2017 Oct 31
    Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    Duration: 2017 Sep 62017 Sep 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    CountryUnited States
    CityWashington
    Period17/9/617/9/9

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    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

    Tokuda, S., Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2017). Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092718] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092718