Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda; Shinji Takayanagi; Mami Matsukawa; Takahiko Yanagitani

doi:10.1109/ULTSYM.2017.8092718

Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc_0.4Al_0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

Original language	English
Title of host publication	2017 IEEE International Ultrasonics Symposium, IUS 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538633830
DOIs	https://doi.org/10.1109/ULTSYM.2017.8092718
Publication status	Published - 2017 Oct 31
Event	2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: 2017 Sep 6 → 2017 Sep 9

Other

Other	2017 IEEE International Ultrasonics Symposium, IUS 2017
Country	United States
City	Washington
Period	17/9/6 → 17/9/9

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ASJC Scopus subject areas

Acoustics and Ultrasonics

Cite this

Tokuda, S., Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2017). Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092718] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092718

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AB - Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

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Access to Document

10.1109/ULTSYM.2017.8092718