Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Abstract

    Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

    Original languageEnglish
    Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538633830
    DOIs
    Publication statusPublished - 2017 Oct 31
    Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    Duration: 2017 Sep 6 → 2017 Sep 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    CountryUnited States
    CityWashington
    Period17/9/6 → 17/9/9

    Fingerprint

    sapphire
    piezoelectricity
    coupling coefficients
    filters
    sensors

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

    Tokuda, S., Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2017). Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092718] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092718

    Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. / Tokuda, Shohei; Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

    2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092718.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Tokuda, S, Takayanagi, S, Matsukawa, M & Yanagitani, T 2017, Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092718, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092718
    Tokuda S, Takayanagi S, Matsukawa M, Yanagitani T. Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. In 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society. 2017. 8092718 https://doi.org/10.1109/ULTSYM.2017.8092718
    Tokuda, Shohei ; Takayanagi, Shinji ; Matsukawa, Mami ; Yanagitani, Takahiko. / Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices. 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017.
    @inproceedings{e46157106dd54bcd8b3f1323a30d6a41,
    title = "Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices",
    abstract = "Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.",
    author = "Shohei Tokuda and Shinji Takayanagi and Mami Matsukawa and Takahiko Yanagitani",
    year = "2017",
    month = "10",
    day = "31",
    doi = "10.1109/ULTSYM.2017.8092718",
    language = "English",
    booktitle = "2017 IEEE International Ultrasonics Symposium, IUS 2017",
    publisher = "IEEE Computer Society",

    }

    TY - GEN

    T1 - Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

    AU - Tokuda, Shohei

    AU - Takayanagi, Shinji

    AU - Matsukawa, Mami

    AU - Yanagitani, Takahiko

    PY - 2017/10/31

    Y1 - 2017/10/31

    N2 - Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

    AB - Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

    UR - http://www.scopus.com/inward/record.url?scp=85039442372&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85039442372&partnerID=8YFLogxK

    U2 - 10.1109/ULTSYM.2017.8092718

    DO - 10.1109/ULTSYM.2017.8092718

    M3 - Conference contribution

    AN - SCOPUS:85039442372

    BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017

    PB - IEEE Computer Society

    ER -

    Access to Document