Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda; Shinji Takayanagi; Mami Matsukawa; Takahiko Yanagitani

doi:10.1109/ULTSYM.2017.8092718

Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc_0.4Al_0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

Original language	English
Title of host publication	2017 IEEE International Ultrasonics Symposium, IUS 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538633830
DOIs	https://doi.org/10.1109/ULTSYM.2017.8092718
Publication status	Published - 2017 Oct 31
Event	2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: 2017 Sep 6 → 2017 Sep 9

Other

Other	2017 IEEE International Ultrasonics Symposium, IUS 2017
Country/Territory	United States
City	Washington
Period	17/9/6 → 17/9/9

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2017.8092718

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@inproceedings{e46157106dd54bcd8b3f1323a30d6a41,

title = "Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices",

abstract = "Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.",

author = "Shohei Tokuda and Shinji Takayanagi and Mami Matsukawa and Takahiko Yanagitani",

year = "2017",

month = oct,

day = "31",

doi = "10.1109/ULTSYM.2017.8092718",

language = "English",

booktitle = "2017 IEEE International Ultrasonics Symposium, IUS 2017",

publisher = "IEEE Computer Society",

note = "2017 IEEE International Ultrasonics Symposium, IUS 2017 ; Conference date: 06-09-2017 Through 09-09-2017",

}

TY - GEN

T1 - Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

AU - Tokuda, Shohei

AU - Takayanagi, Shinji

AU - Matsukawa, Mami

AU - Yanagitani, Takahiko

PY - 2017/10/31

Y1 - 2017/10/31

N2 - Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

AB - Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

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DO - 10.1109/ULTSYM.2017.8092718

M3 - Conference contribution

AN - SCOPUS:85039442372

BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017

PB - IEEE Computer Society

T2 - 2017 IEEE International Ultrasonics Symposium, IUS 2017

Y2 - 6 September 2017 through 9 September 2017

ER -

Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

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