Fine frequency tuning in resonant sensors

C. Cabuz, K. Fukatsu, H. Hashimoto, Shuichi Shoji, T. Kurabayashi, K. Minami, M. Esashi

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Citations (Scopus)

Abstract

To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and Secondary Ion Mass Spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force.

Original languageEnglish
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages245-250
Number of pages6
ISBN (Print)078031834X
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn
Duration: 1994 Jan 251994 Jan 28

Other

OtherProceedings of the IEEE Micro Electro Mechanical Systems
CityOiso, Jpn
Period94/1/2594/1/28

Fingerprint

Tuning
Boron
Sensors
Silicon
Mechanical properties
Secondary ion mass spectrometry
Raman spectroscopy

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Engineering(all)

Cite this

Cabuz, C., Fukatsu, K., Hashimoto, H., Shoji, S., Kurabayashi, T., Minami, K., & Esashi, M. (1994). Fine frequency tuning in resonant sensors. In Proceedings of the IEEE Micro Electro Mechanical Systems (pp. 245-250). Piscataway, NJ, United States: Publ by IEEE.

Fine frequency tuning in resonant sensors. / Cabuz, C.; Fukatsu, K.; Hashimoto, H.; Shoji, Shuichi; Kurabayashi, T.; Minami, K.; Esashi, M.

Proceedings of the IEEE Micro Electro Mechanical Systems. Piscataway, NJ, United States : Publ by IEEE, 1994. p. 245-250.

Research output: Chapter in Book/Report/Conference proceedingChapter

Cabuz, C, Fukatsu, K, Hashimoto, H, Shoji, S, Kurabayashi, T, Minami, K & Esashi, M 1994, Fine frequency tuning in resonant sensors. in Proceedings of the IEEE Micro Electro Mechanical Systems. Publ by IEEE, Piscataway, NJ, United States, pp. 245-250, Proceedings of the IEEE Micro Electro Mechanical Systems, Oiso, Jpn, 94/1/25.
Cabuz C, Fukatsu K, Hashimoto H, Shoji S, Kurabayashi T, Minami K et al. Fine frequency tuning in resonant sensors. In Proceedings of the IEEE Micro Electro Mechanical Systems. Piscataway, NJ, United States: Publ by IEEE. 1994. p. 245-250
Cabuz, C. ; Fukatsu, K. ; Hashimoto, H. ; Shoji, Shuichi ; Kurabayashi, T. ; Minami, K. ; Esashi, M. / Fine frequency tuning in resonant sensors. Proceedings of the IEEE Micro Electro Mechanical Systems. Piscataway, NJ, United States : Publ by IEEE, 1994. pp. 245-250
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