Fine frequency tuning in resonant sensors

C. Cabuz, K. Fukatsu, H. Hashimoto, S. Shoji, T. Kurabayashi, K. Minami, M. Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and Secondary Ion Mass Spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force.

Original languageEnglish
Title of host publicationAn Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems
PublisherPubl by IEEE
Pages245-250
Number of pages6
ISBN (Print)078031834X
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn
Duration: 1994 Jan 251994 Jan 28

Other

OtherProceedings of the IEEE Micro Electro Mechanical Systems
CityOiso, Jpn
Period94/1/2594/1/28

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Cabuz, C., Fukatsu, K., Hashimoto, H., Shoji, S., Kurabayashi, T., Minami, K., & Esashi, M. (1994). Fine frequency tuning in resonant sensors. In An Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems (pp. 245-250). Publ by IEEE.