Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

Masaki Ohyama, Jun Mizuno, Shuichi Shoji, Masatsugu Nimura, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Pages48
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo
Duration: 2014 Jul 152014 Jul 16

Other

Other2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CityTokyo
Period14/7/1514/7/16

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ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Ohyama, M., Mizuno, J., Shoji, S., Nimura, M., Nonaka, T., Shinba, Y., & Shigetou, A. (2014). Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 (pp. 48). [6886187] IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886187