Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

Masaki Ohyama, Jun Mizuno, Shuichi Shoji, Masatsugu Nimura, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Pages48
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo
Duration: 2014 Jul 152014 Jul 16

Other

Other2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CityTokyo
Period14/7/1514/7/16

Fingerprint

Adhesives
Chemical mechanical polishing
Metals
Scanning
Electrons
Substrates

ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Ohyama, M., Mizuno, J., Shoji, S., Nimura, M., Nonaka, T., Shinba, Y., & Shigetou, A. (2014). Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 (pp. 48). [6886187] IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886187

Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. / Ohyama, Masaki; Mizuno, Jun; Shoji, Shuichi; Nimura, Masatsugu; Nonaka, Toshihisa; Shinba, Yoichi; Shigetou, Akitsu.

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. p. 48 6886187.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohyama, M, Mizuno, J, Shoji, S, Nimura, M, Nonaka, T, Shinba, Y & Shigetou, A 2014, Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. in Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014., 6886187, IEEE Computer Society, pp. 48, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, 14/7/15. https://doi.org/10.1109/LTB-3D.2014.6886187
Ohyama M, Mizuno J, Shoji S, Nimura M, Nonaka T, Shinba Y et al. Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society. 2014. p. 48. 6886187 https://doi.org/10.1109/LTB-3D.2014.6886187
Ohyama, Masaki ; Mizuno, Jun ; Shoji, Shuichi ; Nimura, Masatsugu ; Nonaka, Toshihisa ; Shinba, Yoichi ; Shigetou, Akitsu. / Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. pp. 48
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