Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

Masaki Ohyama; Jun Mizuno; Shuichi Shoji; Masatsugu Nimura; Toshihisa Nonaka; Yoichi Shinba; Akitsu Shigetou

doi:10.1109/LTB-3D.2014.6886187

Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

Masaki Ohyama, Jun Mizuno, Shuichi Shoji, Masatsugu Nimura, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

Original language	English
Title of host publication	Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Publisher	IEEE Computer Society
Number of pages	1
ISBN (Print)	9781479952618
DOIs	https://doi.org/10.1109/LTB-3D.2014.6886187
Publication status	Published - 2014 Jan 1
Event	2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan Duration: 2014 Jul 15 → 2014 Jul 16

Publication series

Name	Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference	2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Country/Territory	Japan
City	Tokyo
Period	14/7/15 → 14/7/16

ASJC Scopus subject areas

Filtration and Separation

Access to Document

10.1109/LTB-3D.2014.6886187

Cite this

Ohyama, M., Mizuno, J., Shoji, S., Nimura, M., Nonaka, T., Shinba, Y., & Shigetou, A. (2014). Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886187] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886187

Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. / Ohyama, Masaki; Mizuno, Jun; Shoji, Shuichi et al.

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. 6886187 (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohyama, M, Mizuno, J, Shoji, S, Nimura, M, Nonaka, T, Shinba, Y & Shigetou, A 2014, Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. in Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014., 6886187, Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, IEEE Computer Society, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan, 14/7/15. https://doi.org/10.1109/LTB-3D.2014.6886187

Ohyama M, Mizuno J, Shoji S, Nimura M, Nonaka T, Shinba Y et al. Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. In Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society. 2014. 6886187. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). doi: 10.1109/LTB-3D.2014.6886187

Ohyama, Masaki ; Mizuno, Jun ; Shoji, Shuichi et al. / Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration. Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014. IEEE Computer Society, 2014. (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014).

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abstract = "In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.",

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AU - Mizuno, Jun

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AU - Nonaka, Toshihisa

AU - Shinba, Yoichi

AU - Shigetou, Akitsu

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N2 - In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

AB - In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.

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Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

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